Device and method for protecting against oxidation of a conductive layer in said device
AssigneeMicron Technology, Inc.
InventorVishnu K. Agarwal
Life of this patent
Estimating the term…
Abstract
In a semiconductor device including a first conductive layer, the first conductive layer is treated with a nitrogen/hydrogen plasma before an additional layer is deposited thereover. The treatment stuffs the surface with nitrogen, thereby preventing oxygen from being adsorbed onto the surface of the first conductive layer. In one embodiment, a second conductive layer is deposited onto the first conductive layer, and the plasma treatment lessens if not eliminates an oxide formed between the two layers as a result of subsequent thermal treatments. In another embodiment, a dielectric layer is deposited onto the first conductive layer, and the plasma treatment lessens if not eliminates the ability of the first conductive layer to incorporate oxygen from the dielectric.
Claims26
A method of forming a semiconductor device, comprising:
- depositing a first conductive layer having a surface and having an ability to associate with oxygen;
- incorporating an oxygen-free material directly into said surface to passivate the surface of said first conductive layer to reduce the ability of the first conductive layer to associate with oxygen, the oxygen-free material being methylsilane;
- depositing a second conductive layer on said surface after incorporating the oxygen-free material into the surface;
- exposing said second conductive layer to a thermal process;
- and wherein said step of depositing a first conductive layer comprises depositing a capacitor plate;
- and wherein said method further comprises depositing an insulator over said second conductive layer;
- and
- said step of exposing said second conductive layer to a thermal process comprises flowing said insulator.
A method of forming a semiconductor device, comprising:
- depositing a tungsten nitride layer having a surface;
- incorporating an oxygen-free material directly into the surface of the tungsten nitride layer to passivate the surface of the tungsten nitride layer to reduce an ability of the tungsten nitride layer to associate with oxygen;
- depositing a conductive layer on the surface of the tungsten nitride layer after incorporating the oxygen-free material into the surface of the tungsten nitride layer;
- and
- exposing the conductive layer to a thermal process.
A method of forming a semiconductor device, comprising
- providing a first conductive layer having a surface and having an ability to associate with oxygen;
- placing the surface of the first conductive layer in direct contact with an oxygen-free atmosphere under appropriate conditions to passivate the surface and reduce the ability of the first conductive layer to associate with oxygen, the oxygen-free atmosphere including methylsilane;
- providing a second conductive layer on the surface of the first conductive layer;
- subjecting the second conductive layer to a thermal process;
- and wherein depositing a first conductive layer forms a capacitor plate and wherein the process further comprises depositing an insulator over the second conductive layer and wherein exposing the second conductive layer to a thermal process comprises flowing the insulator.
A method of forming a semiconductor device, comprising:
- depositing a first conductive layer having a surface and having an ability to associate with oxygen;
- incorporating methylsilane directly into the surface to passivate the surface of the first conductive layer to reduce the ability of the first conductive layer to associate with oxygen;
- depositing a second conductive layer on the surface after incorporating the oxygen-free material into the surface;
- and
- exposing the second conductive layer to a thermal process.
A method of forming a semiconductor device, comprising:
- depositing a tungsten nitride layer having a surface;
- incorporating a selection consisting of diborane, methylsilane, hexamethyldisilane, hexamethyldisilazane, HCL, boron trichloride, and combinations thereof directly into the surface of the tungsten nitride layer to passivate the surface of the tungsten nitride layer to reduce an ability of the tungsten nitride layer to associate with oxygen;
- depositing a conductive layer on the surface of the tungsten nitride layer after incorporating the selection consisting of diborane, phosphine, methylsilane, hexamethyldisilane, hexamethyldisilazane, HCL, boron trichloride, and combinations thereof into the surface of the tungsten nitride layer;
- and
- exposing the conductive layer to a thermal process.
A method of forming a semiconductor device, comprising
- providing a first conductive layer having a surface and having an ability to associate with oxygen;
- placing the surface of the first conductive layer in direct contact with a methylsilane, under appropriate conditions to passivate the surface and reduce the ability of the first conductive layer to associate with oxygen;
- providing a second conductive layer on the surface of the first conductive layer;
- and
- subjecting the second conductive layer to a thermal process.
Dependencies are inferred from the claim text.