Method for fabricating SRAM cell
AssigneeHynix Semiconductor Inc.
InventorJeong Soo Kim
Life of this patent
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Abstract
A method of fabricating the SRAM cell is disclosed. The method includes forming a gate on a substrate, forming an oxidation barrier film on side portions of the gate, oxidizing the resultant structure by using an oxidation process to form an oxide film on a top surface of the gate, implanting high density impurity ions to the substrate to form a lightly doped region and a highly doped region in the substrate at side portions of the gate, forming an insulating layer over the substrate to define a contact hole that exposes portions of the gate and the highly doped region, and forming an interconnect in the contact hole to connect the gate and the highly doped region.
Claims21
A method of fabricating a semiconductor device, comprising the steps of:
- forming a gate on a substrate;
- forming an oxidation barrier film on side portions of the gate;
- oxidizing the resultant structure by using an oxidation process and thereby forming an oxide film on a top surface of the gate;
- implanting high density impurity ions to the substrate to form a lightly doped region and a highly doped region in the substrate at side portions of the gate;
- forming an insulating layer over the substrate to define a contact hole that exposes portions of the gate and the highly doped region;
- and
- forming an interconnect in the contact hole to connect the gate and the highly doped region.
A method of fabricating a static random access memory cell, comprising the steps of:
- providing a semiconductor substrate;
- forming a doped polysilicon layer on the semiconductor substrate;
- forming an undoped polysilicon layer on the doped polysilicon layer;
- forming a gate by patterning the undoped polysilicon layer and the doped polysilicon layer;
- forming an oxidation barrier film over the resultant structure including the gate;
- forming sacrificial spacers at the side portions of the oxidation barrier film;
- removing exposed portions of the oxidation barrier film and the sacrificial spacers;
- oxidizing the resultant structure by an oxidation process;
- ion-implanting a high density impurity to the semiconductor substrate below both side portions of the oxidation barrier film to form a lightly doped region and a highly doped region;
- forming an interlayer insulating film on the exposed surface of the resultant structure;
- selectively patterning the interlayer insulating film and the undoped polysilicon layer to expose a portion of the gate and a portion of the highly doped region;
- and
- forming a conductive material layer over the resultant structure to connect the gate to the highly doped region.
Dependencies are inferred from the claim text.