Thyristor provided with integrated circuit-commutated recovery time protection and production method therefor
AssigneeSiemens Aktiengesellschaft
InventorsFranz Josef Niedernostheide, Hans-Joachim Schulze
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Abstract
A thyristor includes a semiconductor body having an anode-side base zone of a first conductance type, and having a cathode-side base zone of the second, opposite conductance type, and has cathode-side and anode-side emitter zones. An anode-side defect zone is included within the anode-side base zone, in which the free charge carriers have a reduced life, with a predetermined thickness of at least 20 μm. The defect zone may be produced by anode-side irradiation of predetermined regions of the semiconductor body with charged particles, and with heat treatment of the semiconductor body in order to stabilize the defect zone.
Claims10
A thyristor comprising:
- a semiconductor body having an anode-side base zone of a first conductance type,
- a cathode-side base zone of a second opposite conductance type, and cathode-side and anode-side emitter zones,
- wherein a defect zone is arranged only within the anode-side base zone on the anode-side and is directly adjacent the emitter zone, in which free charge carriers have a reduced life, and wherein the defect zone has a predetermined thickness of at least 20 μm, and has a length being less than a length of the thyristor.
A production method for a thyristor, comprising the steps of:
- producing a semiconductor body having at least an anode-side base zone;
- producing a defect zone only in the anode-side base zone, the defect zone being shorter in length than a length of the thyristor and being directly adjacent an anode-side emitter zone;
- irradiating predetermined regions of the semiconductor body with charged particles;
- and
- heat-treating the semiconductor body in order to stabilize the defect zone.
Dependencies are inferred from the claim text.