Method for the sulphidation treatment of III-V compound semiconductor surfaces
AssigneeSagem SA
InventorsDominique Lorans, Bruno Canava, Arnaud Etcheberry, Michel Herlem, Jacky Vigneron
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Abstract
Method for deoxidizing and passivating, by sulphidation, a surface of a III-V compound semiconductor material undergo strong oxidation in the presence of oxygen, wherein the surface to be passivated is immersed in a dilute aqueous solution containing sulphide ions with a concentration of between about 10−1M and 10−7M.
Claims4
A method for deoxidizing and passivating, by sulphidation, a surface of a III-V compound semiconductor material undergo strong oxidation in the presence of oxygen, wherein the surface to be passivated is immersed in a dilute aqueous solution containing sulphide ions with a concentration of between about 10−2M and 10−3M.
Dependencies are inferred from the claim text.