# US 6,721,342 B2 · Semiconductor laser device

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- Number: US 6,721,342 B2
- Document ID: US6721342B2
- Status: Granted
- Kind: B2
- Application number: 10/342,984
- Filed: 2003-01-15
- Published: 2003-09-18
- Granted: 2004-04-13
- Earliest claimed: 2002-04-17
- Assignees: Sony Corporation
- Inventors: Yoshifumi Yabuki; Tsuyoshi Tojo
- Web page: https://patentgrep.com/patent/US6721342B2

## CPC

- H01S 5/4031: {Edge-emitting structures}
- H01S 5/0014: {Measuring characteristics or properties thereof (measuring techniques per se G01J, G01K, G01N, G01R)}
- H01S 5/02326: Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
- H01S 5/0234: Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
- H01S 5/02345: Wire-bonding
- H01S 5/02469: {Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC}
- H01S 5/02476: {Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements}
- H01S 5/32341: {blue laser based on GaN or GaP}
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL

## Abstract

Disclosed is an array type semiconductor laser device including a plurality of semiconductor laser chips each of which has an active layer for forming a light emitting point, wherein the semiconductor laser chips are arrayed on the same substrate in such a manner as to be spaced from each other at intervals. In this laser device, an array configuration of the semiconductor laser chips is specified such that a gap between arbitrary adjacent two laser chips located inwardly from both outermost laser chips positioned at both the edges of the semiconductor laser device is wider than a gap between each of said outermost laser chips and an LD chip adjacent thereto. This laser device is advantageous in reducing the effect of thermal interference mutually exerted on the laser chips, thereby ensuring a thermal uniformity over the entire laser chips.

## Claims

### Claim 1

A semiconductor laser device comprising:
a plurality of semiconductor laser chips each of which has an active layer for forming a light emitting point, said semiconductor laser chips being arrayed on the same substrate in such a manner as to be spaced from each other at intervals;
wherein said plurality of semiconductor laser chips are arrayed such that a gap between arbitrary adjacent two laser chips located inwardly from both outermost laser chips positioned at both the edges of said semiconductor laser device is wider than a gap between each of said outermost laser chips and an LD chip adjacent thereto.

### Claim 2 (depends on 1)

A semiconductor laser device according to claim 1, wherein said active layer is made from a nitride compound.