Semiconductor memory device and data read method thereof

A semiconductor memory device, comprising:

• a plurality of memory cells;
• a plurality of data IO line pairs;
• a plurality of first current sense amplifying means configured to control a loop gain in response to a control signal, and configured to amplify and output a current difference of each of the plurality of data IO line pairs;
• and
• a feedback circuit configured to adjust a gain of the first current sense amplifiers depending on a relative delay of data stored in different ones of the memory cells that are to be read by the first current sense amplifiers.

A data read method of a semiconductor memory device including a plurality of memory cells, the method comprising:

• generating a control signal to control a loop gain of a plurality of current sense amplifiers by detecting a variation of an input impedance of the current sense amplifier when a read command is applied and data are read from the memory cell nearest to the plurality of the current sense amplifiers;
• controlling the loop gain of the plurality of the current sense amplifiers in response to the control signal;
• and
• amplifying a current different of each of a plurality of data IO line pairs by the plurality of the current sense amplifiers to generate a plurality of output signals.