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US 6,721,217 B2Granted
Method for memory sensing
AssigneeTexas Instruments Incorporated
InventorsSudhir K. Madan, Hugh McAdams
Life of this patent
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Abstract
Methods are disclosed for reading data from memory cells such as a ferroelectric memory cell in a memory device, where one sense amp bitline is coupled with a precharge voltage while another sense amp bitline is coupled with the memory cell.
Claims9
A method of sensing data from a memory cell in a memory device, the method comprising:
- coupling a first sense amp bitline to the memory cell while a second sense amp bitline is coupled to a precharge voltage;
- and
- thereafter decoupling the second sense amp bitline from the precharge voltage and coupling the second sense amp bitline with a reference.
A method of sensing data from a memory cell in a memory device, the method comprising:
- coupling a first sense amp bitline with the memory cell;
- discharging induced voltage from a second sense amp bitline after coupling the first sense amp bitline with the memory cell;
- and
- coupling the second sense amp bitline with a reference after discharging the induced voltage therefrom.
1 more element
Dependencies are inferred from the claim text.