Magnetoresistive film and memory using the same
AssigneeCanon Kabushiki Kaisha
InventorTakashi Ikeda
Life of this patent
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Abstract
A magnetoresistive film of a structure comprising a non-magnetic film being put between magnetic films. At least one of the magnetic films is a perpendicular magnetic anisotropy film including a rate earth metal, Fe and Co as main ingredients. And, composition of Co to Fe and Co is within a range from 8 atomic percent to 97 atomic percent both inclusive. A memory comprises a plurality of magnetoresistive films described in the above as memory elements; unit for recording information in the magnetoresistive films; and unit for reading the information recorded in the magnetoresistive films.
Claims17
A magnetoresistive film having a structure comprising a non-magnetic film being put between magnetic films, wherein at least one of said magnetic films is a perpendicular magnetic anisotropy film including a rare earth metal, Fe and Co as main ingredients, and composition of Co to Fe and Co is within a range from 8 atomic percent to 97 atomic percent both inclusive.
Dependencies are inferred from the claim text.