Solid state image sensor having different structures for effective pixel area and optical black area
AssigneeSony Corporation
InventorToshiaki Higuchi
Life of this patent
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Abstract
A solid-state image sensor comprising an effective pixel area having light receiving portions which perform photoelectric conversion by taking in light and an optical black area which forms a reference black level without taking in light. The light receiving portions are formed inside electrode opening port portions which are formed through an electrode. Electrode opening port portions in the optical black area which are formed through the electrode are formed narrower than the electrode port portions in the effective pixel area. Alternatively, there may be no opening port portions formed in the optical black area.
Claims4
A solid-state image sensor comprising:
- an effective pixel area having light receiving portions which perform photoelectric conversion a read gate, and a channel stopper;
- and
- an optical black area which generates a reference black level, said light receiving portions being formed inside electrode opening port portions which are formed through an electrode, wherein a width of said light receiving portions between said read gate and channel stopper in said optical black area is formed shorter than a width of said light receiving portions between said read gate and channel stopper in said effective pixel area.
Dependencies are inferred from the claim text.