US 6,720,996 B1Granted

Imaging apparatus

AssigneeHamamatsu Photonics K.K.

InventorsMotohiro Suyama, Shogo Ema, Tadashi Maruno

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Abstract

In order to provide an imaging apparatus that uses an electron-bombarded multiplying tube with an internal solid imaging device with a long life, improved S/N ratio, high resolution, and moreover high sensitivity, an electron-bombarded multiplying tube with a photocathode 13 and a back-illuminated FT-CCD 11 sealed in a vacuum vessel is used as an imaging element. The vacuum vessel is made from a faceplate 12, a ceramic tube 16, and a ceramic stem 17. The photocathode 13 emits photo-electrons from a surface opposite from the incidence plane, in accordance with incident light. The FT-CCD 11 has an incidence plane disposed in the pathway of photo-electrons from the opposite surface. An imaging portion 11a of the FT-CCD 11 has pixels in the vertical direction in the same number as or in greater numbers than the number of output scan lines. A transfer electrode of the imaging portion 11a is constantly applied with a negative voltage during an image accumulation period. By this, dark current can be controlled, the S/N ratio can be improved, resolution can be maintained, and sensitivity can be improved.

Claims5

Dependent claims

An imaging apparatus including, as an imaging element, an electron-bombarded multiplying tube housing, in a vacuum vessel that partially transmits light, a photocathode that emits, in accordance with incident light, photo-electrons from a photo-electron emission surface opposite a light incidence plane, and a charge-transfer solid imaging device that is disposed in confrontation with the photo-electron emission surface of the photocathode and that detects spatial distribution of photoelectrons as an image using a plurality of pixels, the photocathode being applied with a voltage that is negative with respect to a substrate of the imaging device, characterized in that:

the imaging device is configured from a plurality of pixels disposed in horizontal pixel rows in a main scanning direction, the horizontal pixel rows being disposed in a vertical direction that is orthogonal to the main scanning direction, in a number equal to or greater than a predetermined number of output scan lines;
the imaging device is configured from an imaging portion for multiplying and accumulating electrons falling incident on the pixels during an image accumulation period, and an accumulation portion for during a successive horizontal transfer period, transferring to and accumulating in each corresponding pixel, charges accumulated in the imaging portion during the image accumulating period;
and a charge transfer electrode is formed on a surface opposite the photo-electron incidence plane on a substrate of the imaging device and a voltage that is negative with respect to the substrate is applied to the transfer electrode of the imaging portion at least during the image accumulation period.

Dependencies are inferred from the claim text.