Semiconductor device having align key for defining active region and method for manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorMyoung-soo Kim
Life of this patent
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Abstract
A semiconductor device having an align key, which is simultaneously formed by implanting ions before defining an active region, for a precise alignment with a preformed well on a semiconductor substrate when forming a photoresist pattern for defining the active region, and a method for manufacturing the same are provided The semiconductor device includes the align key formed of a first recess having a first depth from a surface of a semiconductor substrate in a scribe line region of the semiconductor substrate, and a second step portion formed by a second recess having a second depth, which is less than or equal to the first depth, from the surface of the semiconductor substrate in a well region of the semiconductor substrate.
Claims47
A semiconductor device comprising:
- an align key formed of a first recess having a first depth from a surface of a semiconductor substrate in a scribe line region of the semiconductor substrate;
- and
- a second step portion formed of a second recess having a second depth from the surface of the semiconductor substrate in a well region of the semiconductor substrate, wherein the second depth is less than or equal to the first depth.
A semiconductor device comprising:
- an align key formed of a first recess having a first depth from a surface of a semiconductor substrate in a scribe line region of the semiconductor substrate;
- a second step portion formed of a second recess having a second depth from the surface of the semiconductor substrate in a first well region of the semiconductor substrate;
- and
- a third step portion formed of a third recess having a third depth from the surface of the semiconductor substrate in a second well region of the semiconductor substrate, wherein the third depth is smaller than the first depth.
A method for manufacturing a semiconductor device, the method comprising the steps of:
- forming an N-well on a P-type silicon substrate having a scribe line region and a device region;
- first implanting a P-type dopant into a portion of the scribe line region and into a first region of the device region on the silicon substrate having the N-well;
- forming first oxide layers having a predetermined thickness on the portion of the scribe line region and the first region by oxidizing a surface of the silicon substrate;
- forming a P-well in the first region by diffusing the P-type dopant, which is implanted into the first region, into the silicon substrate having the first oxide layer;
- forming a first step portion on the surface of the silicon substrate in the scribe line region by removing the first oxide layer formed in the scribe line region;
- forming a second step portion on the surface of the P-well by removing the first oxide layer formed in the first region;
- and
- forming an align key in the scribe line region by using the first step portion.
A method for manufacturing a semiconductor device comprising the steps of:
- forming a first silicon nitride layer pattern in a scribe line region of a silicon substrate to expose a portion of a surface of the silicon substrate;
- forming a first oxide layer by oxidizing the exposed surface of the silicon substrate;
- forming a first step portion having a first recess in the scribe line region, by removing the first oxide layer;
- and
- forming an align key for defining an active region, by using the first step portion.
Dependencies are inferred from the claim text.