Semiconductor device, method of fabricating the same, stack-type semiconductor device, circuit board and electronic instrument
AssigneeSeiko Epson Corporation
InventorsTerunao Hanaoka, Kenji Wada
Life of this patent
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AssigneeSeiko Epson Corporation
InventorsTerunao Hanaoka, Kenji Wada
Estimating the term…
A method of fabricating a semiconductor device including: a first step of forming a through hole in a semiconductor element having electrodes on a first surface; and a second step of forming a conductive layer which is electrically connected to the electrodes and is provided from the first surface through an inner wall of the through hole to a second surface of the semiconductor element which is opposite to the first surface. The conductive layer is formed to have connecting portions on the first and second surfaces so that a distance between at least two electrodes among the electrodes is different from a distance between the connecting portions on at least one of the first and second surfaces, in the second step.
A semiconductor device comprising:
Dependencies are inferred from the claim text.