Semiconductor device and method for manufacturing the same

A semiconductor device, comprising:

• a semiconductor substrate having a main surface including a first region and a second region;
• a first wiring disposed at least partly above the main surface of the semiconductor substrate in the first region;
• a second wiring on the semiconductor substrate in the second region;
• an interlayer dielectric film formed over the first wiring and the first region and over the second wiring and the second region,
• wherein the interlayer dielectric film defines a first through hole over the first wiring and a second through hole over the second wiring,
• wherein the interlayer dielectric film has a maximum thickness over the first region,
• wherein the interlayer dielectric film has a step difference in the interlayer dielectric film between the first region and the second region,
• wherein the first through hole has a first aperture area and the second through hole has a second aperture area, and
• wherein the first aperture area is greater than the second aperture area.

A semiconductor device, comprising:

• a semiconductor substrate having a main surface including a first region and a second region;
• a first wiring disposed at least partly above the main surface of the semiconductor substrate;
• and
• an interlayer dielectric film formed over the first region and the second region,
• wherein the interlayer dielectric film defines a first through hole over the first wiring and a second through hole over the second region,
• wherein the first through hole has a first aperture area and the second through hole has a second aperture area,
• wherein the first aperture area is greater than the second aperture area,
• wherein the interlayer dielectric film has a first height in the first region and a second height in the second region, wherein the first height is greater than the second height,
• wherein the area of the first aperture and the area of the second aperture are determined by the first height and the second height, respectively.

A semiconductor device, comprising:

• a semiconductor substrate having main surface including a first region and a second region;
• a first metal wiring above the semiconductor substrate in the first region;
• and
• an interlayer dielectric film formed over the first metal wiring and the first region and over the second region and defining a first through hole over the first metal wiring and a second through hole over the second region,
• wherein the interlayer dielectric film has a maximum thickness over the first region, and
• wherein an aperture area of the first through hole is greater than an aperture area of the second through hole.

A semiconductor device, comprising:

• a semiconductor substrate having main surface including a first region and a second region;
• a first wiring above the semiconductor substrate in the first region;
• and
• an interlayer dielectric film formed in direct contact with the first wiring and over the first region and over the second region and defining a first through hole over the first wiring and a second through hole over the second region,
• wherein the interlayer dielectric film has a maximum thickness over the first region, and
• wherein an aperture area of the first through hole is greater than an aperture area of the second through hole.

A semiconductor device, comprising:

• a semiconductor substrate having main surface including a first region and a second region;
• a first metal wiring above the semiconductor substrate in the first region;
• a second metal wiring above the semiconductor substrate in the second region;
• an interlayer dielectric film formed over the first metal wiring and the first region and over the second metal wiring and the second region,
• wherein interlayer dielectric film defines a first through hole over the first metal wiring and a second through hole over the second metal wiring,
• wherein the interlayer dielectric film has a maximum thickness over the first region,
• wherein the first through hole has an aperture area and the second through hole has a second aperture area, and
• wherein the first aperture area is greater than the second aperture area.

A semiconductor device, comprising:

• a semiconductor substrate having main surface including a first region and a second region;
• a first wiring above the semiconductor substrate in the first region;
• a second wiring above the semiconductor substrate in the second region;
• an interlayer dielectric film formed in direct contact with the first wiring and over the first region and in direct contact with the second wiring and over the second region,
• wherein interlayer dielectric film defines a first through hole over the first wiring and a second through hole over the second wiring,
• wherein the interlayer dielectric film has a maximum thickness over the first region,
• wherein the first through hole has an aperture area and the second through hole has a second aperture area, and
• wherein the first aperture area is greater than the second aperture area.