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US 6,720,657 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorKyoichi Suguro
Life of this patent
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Abstract
The invention relates to a semiconductor device having improved wiring layers. The wiring is formed on the semiconductor substrate and has a first region and a second region. The first region comprises a conductive film and an insulating film formed by oxidizing a film connected to the conductive film and made of the same material thereof. The second region includes a wiring and is provided on the first region. The Gibbs free energy of the wiring decreases less than that of the conductive film when the wiring and the conductive film are oxidized.
Claims31
A semiconductor device comprising:
- a semiconductor substrate having a conductive region;
- a first insulating film provided on the semiconductor substrate and having a wiring groove in a surface;
- a conductive film provided on a bottom of the wiring groove and lower sides of the wiring groove;
- a second insulating film provided on upper sides of the wiring groove, formed by oxidizing a film of the same material as the conductive film and connected to the conductive film;
- a wiring provided in the conductive film and located in the wiring groove, having an upper surface at a level lower than an upper surface of the first insulating film;
- and
- a third insulating film provided on the wiring and buried in the wiring groove in contact with the conductive film.
4 more elements
A semiconductor device comprising:
- a semiconductor substrate having a conductive region;
- a first insulating film provided on the semiconductor substrate and having a wiring groove in a surface;
- a conductive film provided on a bottom of the wiring groove and lower sides of the wiring groove;
- a second insulating film provided on upper sides of the wiring groove;
- a wiring provided in the conductive film and located in the wiring groove, having an upper surface at a level lower than an upper surface of the first insulating film;
- and
- a third insulating film, composed of a material different from the second insulating film, and which is provided on the wiring and buried in the wiring groove in contact with the conductive film.
4 more elements
Dependencies are inferred from the claim text.