Semiconductor constructions, and methods of forming semiconductor constructions
AssigneeMicron Technology, Inc.
InventorLuan C. Tran
Life of this patent
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Abstract
The invention includes a semiconductor construction. The construction includes a semiconductive material having a surface and an opening extending through the surface. An electrically insulative liner is along a periphery of the opening. A mass comprising one or more of silicon, germanium, metal, metal silicide and dopant is within a bottom portion of the opening, and only partially fills the opening. The mass has a top surface. An electrically insulative material is within the opening and over the top surface of the mass. The top surface of the mass is at least about 200 Angstroms beneath the surface of the semiconductive material. The invention also includes methods of forming semiconductor constructions.
Claims47
A semiconductor construction, comprising:
- a semiconductive mass;
- a pair of devices supported by the mass and separated from one another by an isolation region, the isolation region comprising:
- an opening extending into the semiconductive mass, the opening having a periphery;
- an electrically insulative liner along the periphery of the opening;
- a material within a bottom portion of the opening and over the liner, the material only partially filling the opening, the material having a top surface;
- an electrically insulative layer formed along an inside peripheral surface and in the form of a receptacle within the opening and over the top surface of the material;
- and
- the top surface of the material being at least about 200 Å beneath the surface of the semiconductive mass.
A semiconductor construction, comprising:
- a first semiconductive material having a surface and an opening extending therein;
- a second semiconductive material within a bottom portion of the opening and only partially filling the opening, the second semiconductive material having a top surface;
- an electrically insulative material formed along an inside peripheral surface and in the form of a receptacle within the opening and over the top surface of the second semiconductive material;
- and
- the top surface of the second semiconductive material being at least about 200 Å beneath the surface of the first semiconductive material.
A semiconductor construction, comprising:
- a first semiconductive material having a surface and an opening extending therein, the first semiconductive material being background doped with a first type dopant;
- at least one conductively-doped diffusion region extending into the first semiconductive material in a location proximate the opening, the at least one conductively-doped diffusion region extending to a depth within the first semiconductive material and comprising a second-type majority dopant, one of the first and second dopant types being n-type and the other being p-type;
- a second semiconductive material within a bottom portion of the opening and only partially filling the opening, the second semiconductive material having a top surface elevationally below the depth of the conductively-doped diffusion region;
- and
- an insulative material within the opening and over the top surface of the second semiconductive material.
A semiconductor device, comprising:
- a first semiconductive material having a surface and an opening extending therein;
- a second semiconductive material provided in the opening and having a top surface;
- an electrically insulative material within the opening and over the top surface of the second semiconductive material;
- and
- wherein the top surface being elevationally below a depth of a conductively-doped diffusion region formed in the first semiconductive material.
A semiconductor construction, comprising:
- a first semiconductive material having an opening extending therein;
- a second semiconductive material provided in the opening;
- an insulative liner formed only along an inside periphery of the opening and over a top surface of the second semiconductive material;
- and
- wherein the top surface is elevationally below a depth of a conductively-doped diffusion region formed in the first semiconductive material.
Dependencies are inferred from the claim text.