# US 6,720,635 B1 · Electronic component

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- Number: US 6,720,635 B1
- Document ID: US6720635B1
- Status: Granted
- Kind: B1
- Application number: 09/466,337
- Filed: 1999-12-17
- Granted: 2004-04-13
- Earliest claimed: 1999-12-17
- Assignees: Motorola, Inc.
- Inventors: Daniel J. Koch; Bishnu Prasanna Gogoi; Raymond M. Roop
- Web page: https://patentgrep.com/patent/US6720635B1

## CPC

- H10W 76/40: Fillings or auxiliary members in containers, e.g. centering rings (fillings or auxiliary members for thermal protection or control in containers or encapsulations H10W40/70)
- B81C 1/00246: {Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate}
- G01P 15/0802: {Details}
- G01P 15/125: by capacitive pick-up
- B81B 2201/025: Inertial sensors not provided for in B81B2201/0235 - B81B2201/0242
- B81B 2201/0264: Pressure sensors
- B81C 2203/0778: Topology for facilitating the monolithic integration not provided for in B81C2203/0764 - B81C2203/0771
- G01P 2015/0814: {for translational movement of the mass, e.g. shuttle type}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01)
- G01P: MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT (measuring or recording blood flow A61B5/02, A61B8/06; monitoring speed or deceleration of electrically-propelled vehicles B60L3/00; vehicle lighting systems adapted to indicate speed B60Q1/54; determining position or course in navigation, measuring ground distance in geodesy or surveying G01C; combined measuring devices for measuring two or more variables of movement G01C23/00; measuring velocity of sound G01H; measuring velocity of light G01J7/00; measuring direction or velocity of solid objects by reception or emission of radiowaves or other waves and based on propagation effects, e.g. Doppler effect, propagation time, direction of propagation, G01S; measuring speed of nuclear radiation G01T; measuring acceleration of gravity G01V; {measuring or recording the speed of trains B61L23/00; speed indicators incorporated in motor vehicles B60K35/00; measuring frequency or phase G01R; traffic control G08G})
- B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00)

## Abstract

An electronic component includes a composite semiconductor substrate (110, 810) having a first side (111) opposite a second side (112), a semiconductor device (160, 170) at the first side of the composite semiconductor substrate, and a transducer (400, 600, 900) at the second side of the composite semiconductor substrate.

## Claims

### Claim 1

An electronic component comprising:
a composite semiconductor substrate having a first side opposite a second side;
a semiconductor device at the first side of the composite semiconductor substrate; and
a transducer at the second side of the composite semiconductor substrate.

### Claim 2 (depends on 1)

The electronic component of claim 1 wherein:
the semiconductor device is located directly over the transducer.

### Claim 3 (depends on 1)

The electronic component of claim 1 wherein:
the transducer has an electrical contact extending through a portion of the composite semiconductor substrate and located at the first side of the composite semiconductor substrate.

### Claim 4 (depends on 1)

The electronic component of claim 1 wherein:
the transducer is an accelerometer having an axis of sensitivity substantially parallel to the first and second sides of the composite semiconductor substrate.

### Claim 5 (depends on 1)

The electronic component of claim 1 wherein:
the composite semiconductor substrate further comprises a first semiconductor layer at the first side of the composite semiconductor substrate, a second semiconductor layer at the second side of the composite semiconductor substrate, and an electrically insulative layer located between the first and second semiconductor layers.

### Claim 6 (depends on 5)

The electronic component of claim 5 wherein:
the first semiconductor layer has a first thickness, wherein the second semiconductor layer has a second thickness, and wherein the second thickness is greater than the first thickness.

### Claim 7 (depends on 5)

The electronic component of claim 5 wherein:
at least a portion of the semiconductor device is formed in the first semiconductor layer and wherein at least a portion of the transducer is formed in the second semiconductor.

### Claim 8 (depends on 7)

The electronic component of claim 7 wherein:
the transducer has a portion movable relative to the first semiconductor layer wherein the electrically insulative layer is absent between the semiconductor device and the portion of the transducer.

### Claim 9 (depends on 5)

The electronic component of claim 5 wherein:
the transducer has an electrical contact located at the first side of the composite semiconductor substrate; and
the transducer is located directly underneath the semiconductor device.

### Claim 10 (depends on 9)

The electronic component of claim 9 wherein:
the composite semiconductor substrate has a via extending through the first semiconductor layer and the electrically insulative layer; and
the electrical contact extends from the first side of the composite semiconductor substrate through the via to contact the second semiconductor layer.

### Claim 11 (depends on 5)

The electronic component of claim 5 wherein:
the transducer is an accelerometer having an axis of sensitivity substantially parallel to the first and second sides of the composite semiconductor substrate.

### Claim 12 (depends on 5)

The electronic component of claim 5 wherein:
the first semiconductor layer is comprised of crystalline silicon having a <100> direction; and
the second semiconductor layer is comprised of crystalline silicon having a <100> direction.

### Claim 13 (depends on 5)

The electronic component of claim 5 wherein:
the first semiconductor layer is comprised of crystalline silicon having a <100> direction; and
the second semiconductor layer is comprised of crystalline silicon having a <110> direction.

### Claim 14 (depends on 5)

The electronic component of claim 5 wherein the second semiconductor layer is comprised of polysilicon.

### Claim 15 (depends on 1)

The electronic component of claim 1 comprising:
a cap adjacent to the transducer and coupled to the second side of the composite semiconductor substrate.

### Claim 16

An electronic component comprising:
a silicon-on-insulator substrate having a first side opposite a second side, the silicon-on-insulator substrate comprising:
a first silicon layer at the first side;
a second silicon layer at the second side; and
a silicon dioxide layer located between the first and second silicon layers;
a plurality of transistors located at least partially in the first silicon layer;
multi-layered interconnect system located over the plurality of transistors and the first side of the silicon-on-insulator substrate wherein the multi-layered interconnect system electrically couples together the plurality of transistors; and
an electromechanical transducer located at least partially in the second silicon layer.

### Claim 17 (depends on 16)

The electronic component of claim 16 wherein:
the electromechanical transducer has an axis of sensitivity substantially parallel to the first and second sides of the silicon-on-insulator substrate.

### Claim 18 (depends on 16)

The electronic component of claim 16 wherein:
the silicon-on-insulator substrate includes a via extending through the first silicon layer and the silicon dioxide layer; and
the electro-mechanical transducer has an electrical contact at the first side of the silicon-on-insulator substrate and located in the via.

### Claim 19 (depends on 16)

The electronic component of claim 16 wherein:
the plurality of transistors is located directly over the electro-mechanical transducer.

### Claim 20 (depends on 16)

The electronic component of claim 16 comprising:
a cap adjacent to the electro-mechanical transducer and coupled to the second silicon layer.

### Claim 21

An electronic component comprising:
a silicon-on-insulator substrate comprising a first side and a second side opposite the first side, a first silicon layer at the first side, a second silicon layer at the second side, and a silicon dioxide layer located between the first and second silicon layers, wherein the silicon-on-insulator substrate has a hole extending through the first silicon layer and the silicon dioxide layer; and
an electrical contact to the second silicon layer located at the first side of the silicon-on-insulator substrate wherein the electrical contact is comprised of an electrically conductive layer covering a portion of the first silicon layer, extending into the hole through the first silicon layer, and extending into the hole through the silicon dioxide layer to electrically contact the second silicon layer.