Contactless acceleration switch

A contactless acceleration switch system, comprising in combination:

• a silicon substrate layer containing a source, a drain, and a threshold adjustment channel, wherein the threshold adjustment channel is doped to a level to cause the threshold adjustment channel to invert when a mass moves substantially towards the silicon substrate layer, and wherein the source and the drain act as electrodes providing an electrical signal that indicates that a threshold acceleration value is detected;
• a gate insulating layer located substantially above the source, the drain, and the threshold adjustment channel, wherein the gate insulating layer is composed of silicon dioxide, and wherein the gate insulating layer substantially limits electric conduction between the mass and the silicon substrate layer;
• at least two insulator posts composed of silicon dioxide, wherein the source, the drain, the threshold adjustment channel, and the gate insulating layer are located substantially between the at least two insulator posts;
• the mass composed of doped silicon, wherein the mass operates as a moveable gate, wherein the mass, the source, and the drain operate as a field effect transistor, wherein an air gap is located substantially between the mass and the silicon substrate layer when an acceleration level is substantially below the threshold acceleration value, wherein the mass moves substantially towards the silicon substrate layer when the threshold acceleration value is detected, wherein the threshold adjustment channel inverts when the mass moves towards the silicon substrate layer, wherein current flows between the source and the drain when the threshold adjustment channel inverts, and wherein a substantially constant voltage is applied between the mass and the silicon substrate layer;
• and
• a spring composed of doped silicon substantially supporting the mass above the silicon substrate layer, wherein the spring is attached to each of the at least two insulator posts.