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US 6,720,632 B2Granted
Semiconductor device having diffusion layer formed using dopant of large mass number
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorTaiji Noda
Life of this patent
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Abstract
Between a source/drain heavily-doped diffusion layer and a region below a side face of a gate electrode in an epitaxial semiconductor substrate, an extension heavily-doped diffusion layer where N-type As ions are diffused is formed to have shallower junction than the source/drain heavily-doped diffusion layer. A pocket heavily-doped diffusion layer where P-type indium ions, that is, heavy ions having a relatively large mass number, are diffused is formed under the extension heavily-doped diffusion layer.
Claims25
A semiconductor device comprising:
- a MIS transistor formed on a semiconductor substrate,
- wherein said semiconductor substrate is an epitaxial semiconductor substrate having an expitaxial region formed by epitaxial growing silicon on a silicon substrate
- said MIS transistor includes a gate electrode formed above said epitaxial region with a gate insulating film sandwiched therebetween and a diffusion layer formed in said expitaxial region, by using a dopant ion having a relatively large mass number, and
- said diffusion layer is formed shallower than said epitaxial region.
1 more element
A semiconductor device comprising:
- a MIS transistor formed on a semiconductor substrate,
- wherein said semiconductor substrate composed of silicon and having a main surface of {110}- orientation, and
- said MIS transistor includes a gate electrode formed above said semiconductor substrate with a sate insulating film sandwiched therebetween and a diffusion layer formed, by using a dopant ion having a relatively large mass number, in said semiconductor substrate.
Dependencies are inferred from the claim text.