# US 6,720,622 B1 · SCR-ESD structures with shallow trench isolation

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 6,720,622 B1
- Document ID: US6720622B1
- Status: Granted
- Kind: B1
- Application number: 10/189,874
- Filed: 2002-07-05
- Granted: 2004-04-13
- Earliest claimed: 2002-07-05
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Ta-Lee Yu
- Web page: https://patentgrep.com/patent/US6720622B1

## CPC

- H10D 89/713: {including a PNP transistor and a NPN transistor, wherein each of said transistors has its base region coupled to the collector region of the other transistor, e.g. silicon controlled rectifier [SCR] devices}
- H10D 18/251: {Lateral thyristors}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A novel device structure and process are described for an SCR ESD protection device used with shallow trench isolation structures. The invention incorporates an SCR device with all SCR elements essentially contained within the sane active area without STI elements being interposed between the device anode and cathode elements. This enhances ESD performance by eliminating thermal degradation effects caused by interposing STI structures, and enhances the parasitic bipolar characteristics essential to ESD event turn on. Enabling this unique design is the use of an insulation oxide surface feature which prevents the formation of contact salicides in unwanted areas. This design is especially suited to silicon-on-insulator design, as well as conventional SCR and LVTSCR designs.

## Claims

### Claim 1

A method of fabricating a silicon controlled rectifier electrostatic discharge protection device with fewer required STI elements on a semiconductor substrate comprising:
forming a first doped region of opposite dopant than said substrate extending down from the surface of said substrate;
creating multiple isolation elements within said semiconductor substrate on either side of said silicon controlled rectifier device active area;
forming a heavily doped second region with associated electrical contact area within said first doped region of similar dopant to said first doped region and forming a similar doped fourth region within the substrate area;
forming a heavily doped third region with associated electrical contact area within said first dop region of opposite doping than said first doped region, and forming a similar doped fifth region in the substrate area;
forming a first insulation layer on the surface of said silicon controlled rectifier device everywhere except for said electrical contact areas;
Evaporating and annealing a refactory metal blank over said silicon controlled rectifier device surface including on top of said first insulation surface layer;
Removing unwanted said refractory metal from said silicon controlled rectifier device surface non-electrical contact areas and performing a stabilization anneal;
continuing said silicon controlled rectifier device processing to completion including creating first and second conductor elements and a passivation layer.

### Claim 2 (depends on 1)

The method according to claim 1, whereby said first doped region is donor doped with phosphorous with a dosage between E15 and E17 a/cm2 with an energy between 30 and 80 KeV to produce a N-well.

### Claim 3 (depends on 1)

The method according to claim 1 whereby said second and fourth heavily doped regions with associated contact areas are doped with a donor dopant such as arsenic with a dosage between 1E13 and 1E15 a/cm2 and an energy level between 20 and 40 KeV.

### Claim 4 (depends on 1)

The method according to claim 1 whereby said third and sixth heavily doped regions are doped with an acceptor dopant such as boron with a concentration of between 1E12 and 1E13 a/cm2 and with an energy level between 40 and 80 KeV.

### Claim 5 (depends on 1)

The method according to claim 1 whereby said first insulating layer is thermally grown SiO2 at a temperature between 700 and 1100° C. to a thickness between 1000 and 3000 Å.

### Claim 6 (depends on 1)

The method according to claim 1 whereby said refractory metal blanket consists of titanium or tungsten or tantalum or molybdenum.

### Claim 7 (depends on 1)

The method according to claim 1 whereby said conducting elements are comprised of aluminum or similar metallurgical material.