Material and method for manufacturing semiconductor on insulator substrates and devices

A semiconductor on insulator substrate, comprising:

• a semiconductor layer of silicon alloys;
• an insulator layer formed of a polymer precursor to ceramic below the semiconductor layer, the polymer precursor to ceramic having the formula:
• [AR]n [X]m
• wherein n is at least about 20,
• wherein m is about 0 to 10,000,
• X is a halogen,
• wherein A is selected from the group consisting of carbon, silicon, germanium, Group 13 through Group 16 elements and compounds thereof, lanthanide elements, and combinations thereof,
• R is the same as A or different, and is selected from the group consisting of hydrogen atoms, saturated linear or branched-chain hydrocarbons containing from about 1 to 30 carbon atoms, unsaturated ring-containing or ring hydrocarbons containing from about 5 to 14 carbon atoms in the ring, polymer chain groups having at least 20 recurring structural units, Group 13 through 16 elements and compounds thereof, lanthanide elements, organic groups or polymers containing one or more heteroatoms of N, O, or S, halogens, Group 13 through Group 16 elements, lanthanide elements, and R can be the same or different within each recurring structural unit,
• the molecular weight of the polymer is at least about 10,000 daltons;
• the insulator layer has a thermal conductivity of at least about 100
• J/m° K;
• and
• a substrate layer below the insulator layer.

A method of manufacturing a semiconductor on insulator substrate, comprising:

• providing a substrate layer;
• providing an insulator layer of a semiconductor on insulator substrate on the substrate layer, the insulator layer having the formula:
• [CR]n
• wherein the polymer comprises tetrahedrally hybridized carbon atoms linked to each other by three carbon-carbon single bonds into a three-dimensional continuous random network backbone, and one R linked to each of the carbon atoms, wherein R is the same or different and selected from the group consisting of H, a saturated linear or branched-chain hydrocarbon containing from 1 to 30 carbon atoms, an unsaturated ring hydrocarbon containing 5 to 14 carbon atoms in the ring, each in unsubstituted or substituted form;
• wherein the substituent groups are at least one of halogen, nitro, cyano, alkoxy, carboxy, aryl, hydroxy, heterocyclic alkyl, or heterocyclic aryl groups;
• a halogen, a Group 4 metal, and a Group 13 through Group 16 element, and n is at least 8;
• the insulator layer has a thermal conductivity of at least about 100 J/m° K;
• and
• providing a semiconductor layer on the insulator layer.