Vertical-type MIS semiconductor device

An MIS type semiconductor device which comprises:

• a first conductivity type region which contacts a drift region comprising a plurality of first conductivity type drift path regions and a plurality of second conductivity type compartment regions, each of said second conductivity type compartment regions being positioned between adjacent said first conductivity type drift path regions;
• a second conductivity type channel region on the opposite side of the drift region to the first conductivity type region;
• a first conductivity type source region spaced apart from the drift region via the second conductivity type channel region;
• and
• a plurality of gate electrodes, each gate electrode positioned between a pair of source regions, and which are insulated from the channel region and the source regions by gate insulation film,
• wherein said drift path regions extend laterally across said plurality of gate electrodes,
• wherein the channel region is between the source region and the drift region,
• wherein a drift current flows vertically in said drift path regions.