Method for improving the resistance degradation of thin film capacitors
AssigneeMicron Technology, Inc.
InventorsCem Basceri, Husam N. Al-Shareef
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Abstract
A method for ion implantation of high dielectric constant materials with dopants to reduce film leakage and improve resistance degradation is disclosed. Particularly, the invention relates to ion implantation of (Ba,Sr)TiO3 (BST) with donor dopants to reduce film leakage and improve resistance degradation of the BST film. The invention also relates to varying the ion implantation angle of the dopant to uniformly dope the high dielectric constant materials when they have been fabricated over a stepped structure. The invention also relates to integrated circuits having a doped thin film high dielectric material used as an insulating layer in a capacitor structure.
Claims25
A BST high dielectric constant thin film material having improved resistance degradation formed by the steps of:
- providing a BST high dielectric constant thin film material;
- doping said BST high dielectric thin film material with a dopant by ion implantation.
An integrated circuit capacitor device formed by the steps of:
- forming a first electrode over a substrate;
- forming a thin film dielectric layer of a high capacitance material over said first electrode, wherein said thin film layer is a pervoskite of the formula ABO3 where A represents metals selected from Ba, Bi, Sr, Pb, Ca, and La, and B represents metals selected from Ti, Zr, Ta, Mo, W, and Nb;
- implanting said thin film layer with dopants by ion implantation, said implanting including doping the A-site of said thin film layer with an ion;
- and
- forming a second electrode on said doped thin film layer to complete said integrated circuit capacitor.
Dependencies are inferred from the claim text.