# US 6,720,604 B1 · Capacitor for an integrated circuit

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- Number: US 6,720,604 B1
- Document ID: US6720604B1
- Status: Granted
- Kind: B1
- Application number: 09/250,500
- Filed: 1999-02-16
- Granted: 2004-04-13
- Earliest claimed: 1999-01-13
- Assignees: Agere Systems Inc.
- Inventors: Larry Bruce Fritzinger; Nace Layadi; Sailesh Mansinh Merchant; Pradip Kumar Roy
- Web page: https://patentgrep.com/patent/US6720604B1

## CPC

- H10D 1/696: {comprising multiple layers, e.g. comprising a barrier layer and a metal layer (barrier layers to prevent diffusion of hydrogen or oxygen in perovskite based capacitors H10D1/688)}
- H10D 1/692: {Electrodes}
- H10B 12/03: {Making the capacitor or connections thereto}
- H10P 14/418: {the conductive layers comprising transition metals}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10B: ELECTRONIC MEMORY DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The present invention provides a capacitor comprising a conductive plug comprising a top surface and exposed sidewalls, wherein the sidewalls comprise a layer selected from the group consisting of titanium and titanium nitride, and an electrode material layer over the conductive plug sidewalls, wherein the layer of electrode material is not titanium nor titanium nitride.

## Claims

### Claim 1

A capacitor comprising:
a conductive plug comprising a top surface and exposed sidewalls, wherein the sidewalls comprise a layer selected from the group consisting of titanium and titanium nitride;
an electrode material layer in direct contact with at least a portion of the conductive plug sidewalls, wherein the layer of electrode material is not titanium nor titanium nitride.

### Claim 2 (depends on 1)

The capacitor of claim 1, wherein the conductive plug is selected from the group consisting of tungsten, copper, aluminum and doped polysilicon.

### Claim 3 (depends on 1)

The capacitor of claim 1, wherein the electrode material layer is selected from the group consisting of tungsten, tungsten nitride, tungsten silicide, tungsten silicide nitride and mixtures thereof.

### Claim 4 (depends on 1)

The capacitor of claim 1, further comprising a capacitor dielectric over the electrode material layer.

### Claim 5 (depends on 1)

The capacitor of claim 1, further comprising a capacitor dielectric over the electrode material layer, wherein the capacitor dielectric is reactive with titanium nitride or titanium.

### Claim 6 (depends on 1)

The capacitor of claim 1, further comprising a tantalum pentoxide capacitor dielectric over the electrode material layer.

### Claim 7 (depends on 1)

The capacitor of claim 1, wherein the thickness of the electrode material layer ranges from about 10 nm to about 100 nm.

### Claim 8 (depends on 1)

The capacitor of claim 1, further comprising a layer of capacitor dielectric that is reactive with titanium nitride or titanium, and a second electrode.

### Claim 9 (depends on 1)

A circuit comprising the capacitor of claim 1.

### Claim 10 (depends on 1)

An embedded dynamic random access memory circuit comprising the capacitor of claim 1.

### Claim 11

A capacitor comprising:
a conductive plug comprising a top surface and exposed sidewalls, wherein the sidewalls comprise a layer selected from the group consisting of titanium and titanium nitride, wherein the conductive plug is selected from the group consisting of tungsten, copper, aluminum and doped polysilicon;
an electrode material layer in direct contact with at least a portion of the conductive plug sidewalls, wherein the electrode material layer is selected from the group consisting of tungsten, tungsten nitride, tungsten silicide, tungsten silicide nitride and mixtures thereof.

### Claim 12 (depends on 11)

The capacitor of claim 11, further comprising a capacitor dielectric over the electrode material layer, wherein the capacitor dielectric is reactive with titanium nitride or titanium.

### Claim 13 (depends on 11)

The capacitor of claim 11, further comprising a tantalum pentoxide capacitor dielectric over the electrode material layer.

### Claim 14 (depends on 11)

The capacitor of claim 11, wherein the thickness of the electrode material layer ranges from about 10 nm to about 100 nm.

### Claim 15 (depends on 11)

The capacitor of claim 11, further comprising a layer of capacitor dielectric that is reactive with titanium nitride or titanium, and a second electrode.

### Claim 16

A capacitor comprising:
a tungsten plug comprising a top surface and exposed sidewalls, wherein the sidewalls comprise a layer selected from the group consisting of titanium and titanium nitride;
a tungsten electrode material layer in direct contact with at least a portion of the tungsten plug sidewalls.