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US 6,720,590 B2Granted
C implants for improved SiGe bipolar yield
AssigneeInternational Business Machines Corporation
InventorsDouglas D. Coolbaugh, Kathryn T. Schonenberg
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Abstract
A method for improving the SiGe bipolar yield as well as fabricating a SiGe heterojunction bipolar transistor is provided. The inventive method includes ion-implanting carbon, C, into at one of the following regions of the device: the collector region, the sub-collector region, the extrinsic base regions, and the collector-base junction region. In a preferred embodiment each of the aforesaid regions include C implants.
Claims11
A SiGe heterojunction bipolar transistor having improved SiGe bipolar yield comprising:
- a semiconductor substrate of a first conductivity type including at least a sub-collector region and a collector region;
- a SiGe base layer formed on said substrate, said SiGe base layer comprising at least a collector-base junction region formed over the collector region and an intrinsic base region, wherein said intrinsic base region is abutted by extrinsic base regions that are located in upper regions of a single-crystal SiGe region;
- and
- an emitter region formed on a portion of said intrinsic base region, said emitter region comprising at least an emitter polysilicon region, wherein at least one region of said structure selected from said collector, said sub-collector, said extrinsic base regions and said collector-base junction region includes a C implant.
1 more element
A SiGe heterojunction bipolar transistor comprising:
- bipolar transistor comprises:
- a semiconductor substrate of a first conductivity type including at least a sub-collector region and a collector region which are both doped with implanted C;
- a SiGe base layer formed on said substrate, said SiGe base layer comprising at least a collector-base junction region formed over the collector region, an intrinsic base region, and extrinsic base regions abutting said intrinsic base region, wherein said collector-base junction region and said extrinsic base regions are doped with implanted C;
- and
- an emitter region formed on a portion of said intrinsic base region, said emitter region comprising at least an emitter polysilicon region.
2 more elements
Dependencies are inferred from the claim text.