Structure evaluation method, method for manufacturing semiconductor devices, and recording medium

A method for manufacturing a semiconductor device, comprising the steps of:

• (a) obtaining a plurality of actual measurement values of a physical amount of an element of a semiconductor device by an optical evaluation method for one evaluation wafer of a plurality of wafers each including the element;
• (b) assuming a process condition for forming the element of the evaluation wafer, and obtaining through calculation a structure of the element that is formed through a process using the assumed process condition;
• (c) calculating estimated values of a plurality of measurement values of a physical amount that are obtained when evaluating the structure of the element, which has been obtained in the step (b), by the optical evaluation method;
• (d) estimating the structure of the element based on the plurality of actual measurement values of the physical amount of the element of the evaluation wafer and the estimated values of the plurality of measurement values;
• and
• (e) if a difference between the estimated structure of the element of the evaluation wafer and a designed structure of the plurality of wafers is not within an acceptable range, correcting the process condition of the process at least for wafers of the plurality of wafers other than the evaluation wafer.