# US 6,720,584 B2 · Nitride type compound semiconductor light emitting element

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- Number: US 6,720,584 B2
- Document ID: US6720584B2
- Status: Granted
- Kind: B2
- Application number: 10/004,913
- Filed: 2001-12-03
- Published: 2002-06-20
- Granted: 2004-04-13
- Earliest claimed: 2000-12-04
- Assignees: Sharp Kabushiki Kaisha
- Inventors: Toshio Hata; Mayuko Fudeta; Daigaku Kimura
- Web page: https://patentgrep.com/patent/US6720584B2

## CPC

- H10H 20/8516: {having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient}
- H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors
- H10H 20/813: having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
- H10W 72/536: {the connected ends being ball-shaped}
- H10W 72/5522: {comprising gold [Au]}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

In a nitride type compound semiconductor light emitting element, a phosphor layer is formed in a multilayer constituting the light emitting element. A highly-reflective layer is formed at a side plane of the light emitting element. The nitride type compound semiconductor light emitting element can emit white light or multi-colored light, and is superior in mass production and reliability. The wavelength of the emitted light can be converted into a different wavelength by the light emitting element alone.

## Claims

### Claim 1

A nitride type compound semiconductor light emitting element formed of a multilayer structure including a substrate, a nitride gallium type compound semiconductor layer of a first conductivity type, a nitride gallium type compound semiconductor light emitting layer, and a nitride gallium type compound semiconductor layer of a second conductivity type,
wherein a phosphor is provided in said multilayer structure or at a portion of said substrate and a transparent conductor film is located on and in contact with a layer including said phosphor.

### Claim 2 (depends on 1)

The nitride type compound semiconductor light emitting element according to claim 1, wherein said phosphor is included in an insulator layer.

### Claim 3 (depends on 1)

The nitride type compound semiconductor light emitting element according to claim 1, wherein said phosphor functions as a mask to promote lateral growth.

### Claim 4 (depends on 1)

The nitride type compound semiconductor light emitting element according to claim 1, wherein said phosphor coated with a transparent conductor film is formed in stripes.

### Claim 5 (depends on 1)

The nitride type compound semiconductor light emitting element according to claim 1, wherein said substrate is formed of sapphire, GaN, SiC, ZnO, and Si.

### Claim 6 (depends on 1)

The nitride type compound semiconductor light emitting element according to claim 1, wherein said phosphor is formed below the nitride gallium type compound semiconductor light emitting layer.

### Claim 7 (depends on 6)

The nitride type compound semiconductor light emitting element according to claim 6, wherein said phosphor is formed in the substrate.

### Claim 8 (depends on 7)

The nitride type compound semiconductor light emitting element according to claim 7, wherein light having a wavelength converted at said phosphor is emitted outside from the substrate side.

### Claim 9 (depends on 1)

The nitride type compound semiconductor light emitting element according to claim 1, wherein said phosphor is formed at at least two sites in a direction where layers are stacked.

### Claim 10 (depends on 1)

The nitride type compound semiconductor light emitting element according to claim 1, wherein said multilayer structure has a highly-reflective layer formed at at least one side plane.

### Claim 11 (depends on 4)

The nitride type compound semiconductor light emitting element according to claim 4, wherein said highly-reflective layer and said phosphor in stripes are formed to be orthogonal.

### Claim 12 (depends on 10)

The nitride type compound semiconductor light emitting element according to claim 10, wherein said highly-reflective layer is formed also at opposite side planes.

### Claim 13 (depends on 10)

The nitride type compound semiconductor light emitting element according to claim 10, wherein said highly-reflective layer is also formed at a bottom plane of the substrate.

### Claim 14 (depends on 1)

The nitride type compound semiconductor light emitting element according to claim 1, wherein said phosphor is formed of at least two types of phosphors.

### Claim 15 (depends on 1)

The nitride type compound semiconductor light emitting element according to claim 1, wherein said transparent conductor film is formed of one of In2O3, SnO2, and ZnO or a mixture thereof.