# US 6,720,522 B2 · Apparatus and method for laser beam machining, and method for manufacturing semiconductor devices using laser beam machining > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 6,720,522 B2 - Document ID: US6720522B2 - Status: Granted - Kind: B2 - Application number: 09/983,683 - Filed: 2001-10-25 - Published: 2002-05-02 - Granted: 2004-04-13 - Earliest claimed: 2000-10-26 - Assignees: Kabushiki Kaisha Toshiba - Inventors: Hiroshi Ikegami; Nobuo Hayasaka - Web page: https://patentgrep.com/patent/US6720522B2 ## CPC - H10W 20/023: {the interconnections being through-semiconductor vias} - B23K 26/0732: {into a rectangular shape} - B23K 26/0738: {into a linear shape} - B23K 26/082: Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head - B23K 26/1224: {in vacuum} - B23K 26/16: Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece (by a fluid stream B23K26/142) - B23K 26/361: for deburring or mechanical trimming (B23K26/351 takes precedence) - B23K 26/40: taking account of the properties of the material involved - C23F 1/18: for etching copper or alloys thereof - H10P 34/42: with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) - H10P 50/262: {by physical means only} - H10P 50/642: {Chemical etching} - H10P 50/667: {by liquid etching only} - H10W 20/0245: {comprising use of blind vias during the manufacture} - B23K 2101/40: Semiconductor devices - B23K 2103/50: {Inorganic materials other than metals or composite materials} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM - C23F: NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE (working metal by laser beams B23K26/00; desurfacing by applying flames B23K7/00; working of metal by electro-erosion B23H; producing decorative effects by removing surface material, e.g. by engraving, by etching, B44C1/22; electrolytic etching or polishing C25F); INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract In a laser beam machining method, a liquid, through which a laser beam can be transmitted, is supplied to the target surface of an object to be processed. A laser beam is guided to the target surface through the liquid. The laser beam processes the target surface under the application of ultrasonic vibration. ## Claims ### Claim 1 A laser beam machining method comprising: supplying a liquid, through which a laser beam can be transmitted, to a target surface of an object to be processed from an inlet port located so as to substantially align with the target surface; flowing the liquid through the target surface to an outlet port located so as to substantially align with the target surface; guiding a laser beam to the target surface through the liquid; and processing the target surface by the laser beam under the application of ultrasonic vibration, wherein the liquid is supplied to the target surface in a constant direction in a substantially uniform flow. ### Claim 2 (depends on 1) The method of claim 1, wherein the ultrasonic vibration is applied to the target surface through the liquid. ### Claim 3 (depends on 1) The method of claim 1, wherein the ultrasonic vibration is applied to the target surface through the object. ### Claim 4 (depends on 2) The method of claim 2, wherein the object is a semiconductor wafer, and the target surface of the semiconductor wafer is machined by the laser beam to form a dicing groove in the semiconductor wafer. ### Claim 5 (depends on 4) The method of claim 4, wherein the liquid is supplied to the target surface in a parallel direction to a surface of the semiconductor wafer. ### Claim 6 A laser beam machining method comprising: supplying a liquid, through which a laser beam can be transmitted, to a target surface of an object to be processed from an inlet port located so as to substantially align with the target surface; flowing the liquid through the target surface to an outlet port located so an to substantially align with the target surface; guiding a laser beam to the target surface through the liquid; and processing the target surface by the laser beam, wherein the liquid is supplied to the target surface in a constant direction in a substantially uniform flow. ### Claim 7 A laser beam machining method comprising; supplying a liquid, through which a laser beam can transmitted, to a target surface of an object to be processed from an inlet port located so as to substantially align with the target surface; flowing the liquid through the target surface to an outlet port located so as to substantially align with the target surface; guiding a laser beam to the target surface through the liquid; and processing the target surface by the laser beam, wherein the object is a semiconductor wafer, and the target surface of the semiconductor wafer is machined by the laser beam to form a dicing groove in the semiconductor wafer. ### Claim 8 (depends on 7) The method of claim 7, wherein the liquid is supplied to the target surface in a parallel direction to a surface of the semiconductor wafer. ### Claim 9 A laser beam machining method comprising; supplying a liquid stream, through which a laser beam can be transmitted, to a target of a semiconductor wafer to be processed, in a parallel direction to a surface of the semiconductor wafer; guiding a laser beam to the target through the liquid; and processing the target by the laser beam, wherein the liquid is supplied to the target in a constant direction in a substantially uniform flow. ### Claim 10 A laser beam machining method comprising: supplying a liquid stream, through which a laser beam can be transmitted, to a target of a semiconductor wafer to be processed, in a parallel direction to a surface of the semiconductor wafer; guiding a laser beam to the target through the liquid; and processing the target by the laser beam, wherein the target is a film fanned on the surface of the semiconductor wafer. ### Claim 11 (depends on 10) The method of claim 10, wherein the film is patterned into a predetermined shape. ### Claim 12 (depends on 11) The method of claim 11, wherein the film is a metal film, and the metal film is patterned into a wiring shape. ### Claim 13 (depends on 11) The method of claim 11, wherein the film is a resin insulator, and the resin insulator is patterned into a prescribed shape to form a trench, the method further comprising; filling the trench in the resin insulator with a metal to form a global routing. ### Claim 14 (depends on 10) The method of claim 10, further comprising: rotating the wafer so as to remove the film selectively along a periphery of the wafer. ### Claim 15 (depends on 10) The method of claim 10, wherein the condition of Ti≧0.3/αi is satisfied, where αi is a laser-absorption coefficient of the film, and Ti is a thickness of the film. ### Claim 16 A laser beam machining method comprising: supplying a liquid stream, through which a laser beam can be transmitted, to a target of a semiconductor wafer to be processed, in a parallel direction to a surface of the semiconductor wafer; guiding a laser beam to the target through the liquid; and processing the target by the laser beam, wherein the target is a resist film formed on the surface of the semiconductor wafer via an antireflection film and a predetermined area of the resist film and the antireflection film is removed by scanning the laser beam.