# US 6,720,275 B2 · Methods of fabricating capacitors including Ta2O5 layers in a chamber including changing a Ta2O5 layer to heater separation or chamber pressure > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 6,720,275 B2 - Document ID: US6720275B2 - Status: Granted - Kind: B2 - Application number: 10/387,091 - Filed: 2003-03-12 - Published: 2003-09-04 - Granted: 2004-04-13 - Earliest claimed: 1995-11-29 - Assignees: Samsung Electronics Co., Ltd. - Inventors: Ki-yeon Park; Heung-soo Park; Young-wook Park - Web page: https://patentgrep.com/patent/US6720275B2 ## CPC - H10P 14/69393: {the material containing tantalum, e.g. Ta2O5} - C23C 16/405: {of refractory metals or yttrium} - C23C 16/46: characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) - C23C 16/56: After-treatment - H10P 14/6529: {by exposure to a gas or vapour} - H10P 14/6538: {by exposure to UV light} - H10P 14/6544: {to change the morphology of the insulating materials, e.g. transformation of an amorphous layer into a crystalline layer} - H10P 14/6334: {using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329)} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract Methods of forming Ta2O5 layers in a process chamber are disclosed. A Ta2O5 layer can be maintained at a first temperature that is less than a temperature for crystallization of the Ta2O5 layer. At least one of a position of the Ta2O5 layer in the process chamber relative to the heater and a pressure in the process chamber is changed to increase the temperature of the Ta2O5 layer to about the temperature for crystallization. ## Claims ### Claim 1 A method of forming a Ta2O5 layer in a process chamber, comprising: maintaining the Ta2O5 layer at a first temperature that is less than a temperature for crystallization of the Ta2O5 layer; and changing at least one of a position of the Ta2O5 layer in the process chamber relative to the heater and a pressure in the process chamber to increase the temperature of the Ta2O5 layer to about the temperature for crystallization. ### Claim 2 (depends on 1) A method according to claim 1 wherein the position of the Ta2O5 layer in the process chamber comprises a first position of the Ta2O5 layer in the process chamber that is separated from the beater by a first distance to maintain the Ta2O5 layer at the first temperature, wherein the changing comprises moving the Ta2O5 layer from the first position to a second position in the process chamber that is separated from the heater by a second distance that is less than the first distance to increase the temperature of the Ta2O5 layer to about the temperature for crystallization. ### Claim 3 (depends on 2) A method according to claim 2, wherein the first distance comprises about 2 mm, and wherein the second distance comprises less than about 1 mm. ### Claim 4 (depends on 1) A method according to claim 1 wherein the position of the Ta2O5 layer in the process chamber comprises a first position of the Ta2O5 layer in the process chamber that is separated from the heater by a first distance, wherein the changing comprises: moving the Ta2O5 layer from the first position to a second position in the chamber that is separated from the heater by a second distance that is greater than the first distance; and moving the Ta2O5 layer from the second position to a third position in the chamber that is separated from the heater by a third distance that is less than the first distance. ### Claim 5 (depends on 1) A method according to claim 1 wherein the heating further comprises heating the Ta2O5 layer to a temperature that is less than about 650° C. in an O3 or UV-O3 atmosphere in the process chamber. ### Claim 6 (depends on 1) A method according to claim 1 wherein the changing further comprises heating the Ta2O5 layer to a temperature that is greater than about 750° C. in an O2, N2O, N2, Ar, or He atmosphere. ### Claim 7 (depends on 1) A method according to claim 1 wherein the changing comprises increasing the pressure in the process chamber to increase the temperature of the Ta2O5 layer to about the temperature for crystallization. ### Claim 8 (depends on 7) A method according to claim 7 wherein the first pressure comprises about 1.0 Torr, and wherein the second pressure comprises about 300 Torr. ### Claim 9 (depends on 1) A method according to claim 1 wherein the position of the Ta2O5 layer in the process chamber comprises a first position of the Ta2O5 layer in the process chamber that is separated from the heater by a first distance, wherein the changing comprises moving the Ta2O5 layer from the first position to a second position in the chamber that is separated from the heater by a second distance that is less than the first distance, and wherein the changing further comprises increasing the pressure in the process chamber to increase the temperature of the Ta2O5 layer to about the temperature for crystallization. ### Claim 10 (depends on 1) A method according to claim 1 wherein the heating further comprises: moving the Ta2O5 layer to a second position in the chamber that is separated from the heater by a first distance; and moving the Ta2O5 layer away from the heater as the temperature at the first position increases.