Process for removing polymers during the fabrication of semiconductor devices
AssigneeSTMicroelectronics S.r.l.
InventorsEnrico Bellandi, Francesco Pipia, Mauro Alessandri
Life of this patent
Estimating the term…
Abstract
The present invention relates to a process for removing post-etch residues or polymers from the surface of semiconductor devices which comprises treating the semiconductor device with an aqueous ammonia or ammonium hydroxide solution, optionally containing ozone for a time sufficient to effectively remove said post-etch residues or polymers from the surface of the semiconductor device and rinsing the semiconductor device with ozonized water, i.e. water enriched with ozone, in which water is preferably deionized (ozone-DIW).
Claims27
A process for removing post-etch residues or polymers from the surface of semiconductor devices which comprises treating the semiconductor device with an aqueous ammonia or ammonium hydroxide solution for a time sufficient to effectively remove said post-etch residues or polymers from the surface thereof and rinsing the semiconductor device with ozonized water.
A process for removing post-etch residues or polymers from the surface of semiconductor devices which comprises treating the semiconductor device with ozonized water and then with an aqueous ammonia or ammonium hydroxide solution for a time sufficient to effectively remove said post-etch residues or polymers from the surface thereof, and then rinsing the semiconductor device with ozonized water.
A process for removing post-etch residues or polymers from the surface of semiconductor devices which comprises treating the semiconductor device with an aqueous ammonia or ammonium hydroxide solution containing ozone for a time sufficient to effectively remove said post-etch residues or polymers from the surface thereof, and then rinsing the semiconductor device with ozonized water.
A method comprising:
- treating a semiconductor device with a 10-5000 ppm aqueous ammonia solution for 5 seconds to 15 minutes;
- and
- rinsing the semiconductor device with ozonized water having an ozone concentration not less than 5 ppm ozone.
A method comprising:
- treating a semiconductor device with a 10-5000 ppm ammonium hydroxide solution for 5 seconds to 15 minutes;
- and
- rinsing the semiconductor device with ozonized water having an ozone concentration not less than 5 ppm ozone.
Dependencies are inferred from the claim text.