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US 6,720,259 B2Granted
Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition
AssigneeGenus, Inc.
InventorsAna R. Londergan, Sasangan Ramanathan, Jereld Winkler, Thomas E. Seidel
Life of this patent
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Abstract
A method to deposit a passivating layer of a first material on an interior reactor surface of a cold or warm wall reactor, in which the first material is non-reactive with one or more precursor used to form a second materials. Subsequently when a film layer is deposited on a substrate by subjecting the substrate to the one or more precursors, in which at least one precursor has a low vapor pressure, uniformity and repeatability is improved by the passivation layer.
Claims30
A method comprising:
- depositing a passivating layer of a first material on an interior reactor surface of a cold or warm wall reactor, in which the first material is non-reactive with one or more precursors used to form a second material;
- and
- depositing a film layer of the second material on a substrate by subjecting the substrate to the one or more precursors, in which at least one precursor has a low vapor pressure.
A method comprising:
- depositing a passivating layer of a first material on an interior reactor surface of a cold or warm wall reactor, in which the first material is non-reactive with one or more precursors used to form a second material;
- and
- depositing a film layer of the second material on a substrate by subjecting the substrate to the one or more precursors, in which at least one precursor has a low vapor pressure;
- the passivating layer to improve uniformity and repeatability of the second material.
1 more element
Dependencies are inferred from the claim text.