# US 6,720,257 B1 · Bump with basic metallization and method for manufacturing the basic metallization > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 6,720,257 B1 - Document ID: US6720257B1 - Status: Granted - Kind: B1 - Application number: 09/937,955 - Filed: 2001-09-28 - Granted: 2004-04-13 - Earliest claimed: 1999-03-30 - Assignees: Pac Tech—Packaging Technologies GmbH - Inventors: Elke Zakel - Web page: https://patentgrep.com/patent/US6720257B1 ## CPC - H10W 72/012: {of bump connectors, dummy bumps or thermal bumps} - H10W 72/251: {Materials} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A method for manufacturing a bump on a terminal face (Z1) of a semiconductor substrate (20), in which the terminal face is nucleated to generate a basic metallization through electrolytic coating of the terminal face with zincate, in such a way that zinc particles (24) electrolytically deposited on the terminal face serve as nuclei for an ensuing contact metallization (28) autocatalytically deposited on the basic metallization. In addition to the electrolytic coating with zincate, an electrolytic coating of the terminal face with palladium takes place, in such a way that, in addition to zinc particles (24), palladium particles (25) deposited on the terminal face serve as nuclei for the contact metallization subsequently autocatalytically deposited on the terminal face. ## Claims ### Claim 1 A method for manufacturing a bump on a terminal face of a semiconductor substrate, the method comprising: nucleating the terminal face to generate a basic metallization through electrolytic coating of the terminal face with zincate such that zinc particles electrolytically deposited on the terminal face serve as nuclei for an ensuing adhesion between the contact metallization autocatalytically deposited on the basic metallization and the terminal face; and electrolyticly coating of the terminal face with palladium such that, in addition to the deposition of zinc particles, palladium particles are deposited on the terminal face and serve as nuclei for ensuring adhesion between the contact metallization subsequently autocatalytically deposited on the basic metallization and the terminal face, wherein the basic metallization is formed by numerous independent zinc particles and numerous independent palladium particles. ### Claim 2 (depends on 1) The method according to claim 1, wherein the electrolytic coating of the terminal face with zincate to form a zincate coating takes place in one method step, and the electrolytic coating of the terminal face with palladium to form a palladium coax takes place in a subsequent method step. ### Claim 3 (depends on 2) The method according to claim 2, wherein the palladium coating is preceded by at least a partial removal of the zinc particles followed by a renewed zincate coating. ### Claim 4 (depends on 3) The method according to claim 3, wherein the at least partial removal of zinc particles takes place via stripping. ### Claim 5 (depends on 1) The method according to claim 1, wherein the electrolytic coating of the terminal face with palladium to form a palladium coating takes place in one method step, and the electrolytic coating of the terminal face with zincate to form a zincate coating takes place in a subsequent method step. ### Claim 6 (depends on 5) The method according to claim 5, wherein the zincate coating is followed by an at least partial removal of the zinc particles followed by a renewed zincate coating. ### Claim 7 (depends on 6) The method according to claim 6, wherein the at least partial removal of zinc particles takes place via stripping. ### Claim 8 (depends on 1) The method according to claim 1, wherein a first electrolytic coating of the terminal face with zincate to form a zincate coating takes place in a first method step, the electrolytic coating of the terminal face with palladium to form a palladium coating takes place in a subsequent method step, and a second zincate coating takes place in another method step. ### Claim 9 (depends on 8) The method according to claim 8, wherein at least a partial removal of the zinc particles takes place after the first zincate coating and before the palladium coating. ### Claim 10 (depends on 9) The method according to claim 9, wherein the at least partial removal of zinc particles takes place via stripping. ### Claim 11 The method according to clam 1, wherein the electrolytic coating of the terminal face with zincate to form a zincate coating and electrolytic coating of the terminal face with palladium to form a palladium coating take place in a single method step, in such a way that the zincate coating occurs simultaneously with the palladium coating via a mixed electrolyte zincate and palladium coating. ### Claim 12 (depends on 11) The method according to claim 11, wherein the mixed electrolyte zincate and palladium coating is followed by at least a partial removal of the zinc particles, followed by a renewed zincate coating of the terminal face. ### Claim 13 (depends on 12) The method according to claim 12, wherein the at least partial removal of zinc particles takes place via stripping. ### Claim 14 (depends on 11) The method according to claim 11, wherein the mixed electrolyte zincate and palladium coating is preceded by a zincate coating of the terminal face, followed by an at least a partial removal of the zinc particles. ### Claim 15 (depends on 14) The method according to claim 14, wherein the at least partial removal of zinc particles takes place via stripping. ### Claim 16 A bump with a basic metallization situated on a terminal face of a semiconductor substrate and a contact metallization situated on the basic metallization, wherein the basic metallization has zinc and palladium as constituents each serving as nuclei for ensuring adhesion between the contact metallization autocatalytically deposited on the basic metallization nd the terminal face and at least one constituent of the basic metallization is formed as numerous mutually independent areas. ### Claim 17 A method for manufacturing a bump on a terminal face of a semiconductor substrate, the method comprising: electrolyticly seeding of the terminal face with zincate such that numerous independent zinc particles are electrolytically deposited on the terminal face; electrolyticly seeding of the terminal face with palladium such that, in addition to the deposition of zinc particles, numerous independent palladium particles are deposited on to terminal face, said steps of electrolytically seeding with zincate and electrolytically seeding with palladium taking place as sucessive steps, one following the other; and subsequent to said steps of electrolyticly seeding of the terminal face with zincate and electrolyticly seeding of the terminal face with palladium, autocatalytically depositing a contact metallization on the terminal face, wherein a basic metallization is formed by the numerous independent zinc particles and the numerous independent palladium particles serving as nuclei for the contact metallization, with the numerous independent zinc particles and numerous independent palladium particles nucleating the terminal ice to generate the basic metallization to provide adhesion between the contact metallization and the terminal face. ### Claim 18 (depends on 17) The method according to claim 17, wherein the electrolytic seeding of the terminal face with zincate to form the numerous independent zinc particles takes place in one method step, and the electrolytic seeding of the terminal face with palladium to form the numerous independent palladium particles takes place in a subsequent method step. ### Claim 19 (depends on 17) The method according to claim 17, wherein the electrolytic seeding of the terminal face with palladium to form the numerous independent palladium particles takes place in one method step, and the electrolytic seeding of the terminal face with zincate to form the numerous independent zinc particles takes place in a subsequent method step.