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US 6,720,253 B2Granted
Method of manufacturing semiconductor device having an aluminum wiring layer
AssigneeKabushiki Kaisha Toshiba
InventorsJunichi Wada, Yasushi Oikawa, Tomio Katata
Life of this patent
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Abstract
A semiconductor device is constituted by embedding an Al wiring layer in a second object formed on a interlayer-insulating film on one principal plane of a semiconductor substrate and connecting with an Al wiring formed on the substrate and at least, an Nb liner film and NbAl alloy film are formed between the second object and the Al wiring layer.
Claims13
A semiconductor-device manufacturing method comprising:
- forming an interlayer-insulating film having a concave portion on a semiconductor substrate;
- forming a liner film made of either of Nb and NbN in said concave portion;
- forming a conductive film which is an Al conductive film mainly containing Al on a region including the inside of said concave portion while heating said semiconductor substrate and filling the inside of said concave portion with said Al conductive film by reflowing said Al conductive film, in which an NbAl alloy is formed at an interface between said liner film and said conductive film in said conductive film forming by continuously executing said liner film forming and said conductive film forming under a vacuum state;
- and
- forming a wiring layer made of said conductive film by removing at least a portion of said conductive film from the outside of said concave portion.
2 more elements
Dependencies are inferred from the claim text.