# US 6,720,239 B2 · Synthesis of layers, coatings or films using precursor layer exerted pressure containment

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- Number: US 6,720,239 B2
- Document ID: US6720239B2
- Status: Granted
- Kind: B2
- Application number: 10/197,052
- Filed: 2002-07-17
- Published: 2003-03-20
- Granted: 2004-04-13
- Earliest claimed: 2001-09-20
- Assignees: Heliovoit Corporation
- Inventors: Billy J. Stanbery
- Web page: https://patentgrep.com/patent/US6720239B2

## CPC

- C23C 14/5846: {Reactive treatment}
- C23C 14/0005: {Separation of the coating from the substrate}
- C23C 14/5886: {Mechanical treatment (involving removal of material C23C14/588)}
- C23C 14/5893: {Mixing of deposited material}
- C23C 26/00: Coating not provided for in groups C23C2/00 - C23C24/00
- H10F 10/167: comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
- H10F 71/139: {using temporary substrates}
- H10F 77/126: {comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]}
- Y02E 10/541: CuInSe2 material PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- Y10T 156/1111: Using solvent during delaminating [e.g., water dissolving adhesive at bonding face during delamination, etc.]
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

Systems and methods are described for synthesis of films, coatings or layers using precursor exerted pressure containment. A method includes exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate; forming a composition layer; and moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate.

## Claims

### Claim 1

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate that includes a tool and a second precursor layer that is coupled to second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate and a release layer is located between the tool and the first precursor layer.

### Claim 2 (depends on 1)

The method of claim 1, wherein the release layer functions as a template.

### Claim 3 (depends on 1)

The method of claim 1, wherein the release layer includes at least one fluoride selected from the group consisting of CaF2 and SrF2.

### Claim 4

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate that includes a tool and a second precursor layer that is coupled to a second substrate;
forming a composition layer;
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate; and
coupling another precursor layer to the tool after moving.

### Claim 5

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate and an electrode layer is located between the second precursor layer and the second substrate.

### Claim 6 (depends on 5)

The method of claim 5, wherein the electrode layer includes at least one metal selected from the group consisting of Mo and Ti.

### Claim 7

A method, comprising:
exerting a pressure between a first precursor lever that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer;
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate; and
applying an electrostatic field across the first precursor and the second precursor.

### Claim 8 (depends on 7)

The method of claim 7, wherein the electrostatic field controls, at least in-part, the pressure.

### Claim 9

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate, and a template layer is located between the first precursor layer and the first substrate.

### Claim 10

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate, and a surfactant is located between the first precursor layer and the first substrate.

### Claim 11

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate, and a surfactant is located between the first precursor and the second precursor.

### Claim 12

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate, and an adhesion layer is located between the first precursor layer and the first substrate.

### Claim 13

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrates; and
depositing a buffer layer on the composition layer.

### Claim 14 (depends on 13)

The method of claim 13, further comprising depositing a window layer on the buffer layer.

### Claim 15

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
modifying at least a part of the first substrate, wherein the composition layer remains coupled to the second substrate, wherein modifying includes removing and a portion of the first substrate is not removed.

### Claim 16

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed from multinary compounds; and
modifying at least a part of the first substrate, wherein the film remains coupled to the second substrate, modifying includes removing and removing includes etching.

### Claim 17

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed from multinary compounds; and
modifying at least a part of the first substrate, wherein the film remains coupled to the second substrate, modifying includes removing and a portion of the first substrate is not removed.

### Claim 18

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrates;
forming a coating; and
modifying at least a part of the first substrate, wherein the coating remains coupled to the second substrate, wherein modifying includes removing and removing includes etching.

### Claim 19

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating; and
modifying at least a part of the first substrate, wherein the coating remains coupled to the second substrate, wherein modifying includes removing and a portion of the first substrate is not removed.

### Claim 20

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds; and
moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate and the pressure is sufficient to substantially prevent escape of vapor from the first precursor layer, the second precursor layer and the film.

### Claim 21

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate that includes a tool and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds; and
moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate, wherein a release layer is located between the tool and the first precursor layer.

### Claim 22 (depends on 21)

The method of claim 21, wherein the release layer functions as a template.

### Claim 23 (depends on 21)

The method of claim 21, wherein the release layer includes at least one fluoride selected from the group consisting of CaF2 and SrF2.

### Claim 24

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate that includes a tool and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds;
moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate; and
coupling another precursor layer to the tool after moving.

### Claim 25

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds; and
moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate and an electrode layer is located between the second precursor layer and the second substrate.

### Claim 26 (depends on 25)

The method of claim 25, wherein the electrode layer includes at least one metal selected from the group consisting of Mo and Ti.

### Claim 27

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds; and
moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate and the film includes copper, indium and selenide.

### Claim 28 (depends on 27)

The method of claim 27, further comprising controlling the temperature of the second precursor layer within a range of from approximately 520° C. to approximately 635° C.

### Claim 29 (depends on 27)

The method of claim 27, wherein the first precursor layer includes (In,Ga)y(S,Se)1-y and the second precursor layer includes CuxSe1-x.

### Claim 30

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds;
moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate; and
applying an electrostatic field across the first precursor and the second precursor.

### Claim 31 (depends on 30)

The method of claim 30, wherein the electrostatic field controls, at least in-part, the pressure.

### Claim 32

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds; and
moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate and a template layer is located between the first precursor layer and the first substrate.

### Claim 33 (depends on 32)

The method of claim 32, wherein the template layer includes copper, indium and selenide.

### Claim 34 (depends on 33)

The method of claim 33, wherein the template layer includes num and sulfur.

### Claim 35

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds; and
moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate and a template layer is located between the second precursor layer and the second substrate.

### Claim 36

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds; and
moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate, wherein a surfactant is located between the first precursor layer and the first substrate.

### Claim 37

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds; and
moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate, wherein a surfactant is located between the first precursor and the second precursor.

### Claim 38

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds; and
moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate, wherein an adhesion layer is located between the first precursor layer and the first substrate.

### Claim 39

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds; and
moving the first substrate relative to the second substrate wherein the film remains coupled to the second substrate, wherein a diffusion barrier layer is located between the first precursor layer and the first substrate.

### Claim 40

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds; and
moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate, wherein a diffusion barrier layer is located between the second precursor layer and the second substrate.

### Claim 41

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate an a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds; and
moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate and
the first precursor layer is coupled to the first substrate by a deposition method selected from the group consisting of sputtering followed by plasma discharge, particle deposition, physical vapor deposition and chemical vapor deposition; and
the second precursor layer is coupled to the second substrate by deposition method selected from the group consisting of sputtering followed by plasma discharge, particle deposition, physical vapor deposition and chemical vapor deposition.

### Claim 42

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds;
moving the first substrate relative to the second substrate, wherein the film remains coupled to the second substrate; and
depositing a buffer layer on the film.

### Claim 43 (depends on 42)

The method of claim 42, further comprising depositing a window layer on the buffer layer.

### Claim 44

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating; and
moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate and the pressure is sufficient to substantially prevent escape of vapor from the first precursor layer, the second precursor layer and the coating.

### Claim 45

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate that includes a tool and a second precursor layer that is coupled to a second substrate;
forming a coating; and
moving the first substrate relative to the second substrate, wherein a release layer is located between the tool and the first precursor layer.

### Claim 46 (depends on 45)

The method of claim 45, wherein the release layer functions as a template.

### Claim 47 (depends on 45)

The method of claim 45, wherein the release layer includes at least one fluoride selected from the group consisting of CaF2 and SrF2.

### Claim 48

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate that includes a tool and a second precursor layer that is coupled to a second substrate;
forming a coating;
moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate; and
coupling another precursor layer to the tool after moving.

### Claim 49

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating; and
moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate and an electrode layer is located between the second precursor layer and the second substrate.

### Claim 50 (depends on 49)

The method of claim 49, wherein the electrode layer includes at least one metal selected from the group consisting of Mo and Ti.

### Claim 51

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating; and
moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate and the coating includes copper, indium and selenide.

### Claim 52 (depends on 51)

The method of claim 51, further comprising controlling the temperature of the second precursor layer within a range of from approximately 520° C. to approximately 635° C.

### Claim 53 (depends on 51)

The method of claim 51, wherein the first precursor layer includes (In,Ga)y(S,Se)1-y and the second precursor layer includes CuxSe1-x.

### Claim 54

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating;
moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate; and
applying an electrostatic field across the first precursor and the second precursor.

### Claim 55 (depends on 54)

The method of claim 54, wherein the electrostatic field controls, at least in-part, the pressure.

### Claim 56

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating; and
moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate and a template layer is located between the first precursor layer and the first substrate.

### Claim 57 (depends on 56)

The method of claim 56, wherein the template layer includes copper, indium and selenide.

### Claim 58 (depends on 57)

The method of claim 57, wherein the template layer includes aluminum and sulfur.

### Claim 59

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating; and
moving the first substrate relative to the second substrate, a template layer is located between the second precursor layer and the second substrate.

### Claim 60

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating; and
moving the first substrate relative to the second substrate, wherein a surfactant is located between the first precursor layer and the first substrate.

### Claim 61

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating; and
moving the first substrate relative to the second substrate, wherein a surfactant is located between the first precursor and the second precursor.

### Claim 62

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate
forming a coating; and
moving the first substrate relative to the second substrate, wherein an adhesion layer is located between the first precursor layer and the first substrate.

### Claim 63

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating; and
moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate and a diffusion barrier layer is located between the first precursor layer and the first substrate.

### Claim 64

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating; and
moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate and a diffusion barrier layer is located between the second precursor layer and the second substrate.

### Claim 65

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating; and
moving the first substrate relative to the second substrate, wherein i) the coating remains coupled to the second substrate, ii) the first precursor layer is coupled to the first substrate by a deposition method selected from the group consisting of sputtering followed by plasma discharge, particle deposition, physical vapor deposition and chemical vapor deposition, and iii) the second precursor layer is coupled to the second substrate by a deposition method selected from the group consisting of sputtering followed by plasma discharge, particle deposition, physical vapor deposition and chemical vapor deposition.

### Claim 66

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating;
moving the first substrate relative to the second substrate wherein the coating remains coupled to the second substrate; and
depositing a buffer layer on the coating.

### Claim 67 (depends on 66)

The method of claim 66, further comprising depositing a window layer on the buffer layer.

### Claim 68

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
moving the first substrate relative to the second substrate, wherein the composition layer remains coupled to the second substrate,
wherein a template layer is located between the second precursor layer and the second substrate.

### Claim 69

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a composition layer; and
modifying at least a part of the first substrate, wherein the composition layer remains coupled to the second substrate, wherein
modifying includes removing; and
moving includes etching.

### Claim 70

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds; and
moving the first substrate relative to the second substrate, wherein the film formed of multinary compounds remains coupled to the second substrate,
wherein a template layer is located between the second precursor layer and the second substrate.

### Claim 71

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a film formed of multinary compounds; and
modifying at least a part of the first substrate, wherein the film formed of multinary compounds remains coupled to the second substrate, wherein
modifying includes removing; and
moving includes etching.

### Claim 72

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating; and
moving the first substrate relative to the second substrate, wherein the coating remains coupled to the second substrate,
wherein a template layer is located between the second precursor layer and the second substrate.

### Claim 73

A method, comprising:
exerting a pressure between a first precursor layer that is coupled to a first substrate and a second precursor layer that is coupled to a second substrate;
forming a coating; and modifying at least a part of the first substrate, wherein the coating remains coupled to the second substrate, wherein
modifying includes removing; and
moving includes etching.