Method for manufacturing a semiconductor film
AssigneeCanon Kabushiki Kaisha
InventorsYukiko Iwasaki, Tatsumi Shoji, Shoji Nishida
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Abstract
A method for manufacturing a semiconductor film includes a step of preparing a first member including a semiconductor substrate, a semiconductor layer, and a separation layer provided between the semiconductor substrate and the semiconductor layer, a step of bonding or attracting a second member which is hardly heated by induction heating, onto the semiconductor layer of the first member, and a step of separating semiconductor layer from the semiconductor substrate at the separation layer by heating the semiconductor substrate by induction heating.
Claims3
A method for manufacturing a semiconductor film comprising the steps of:
- preparing a first member including a semiconductor substrate, a semiconductor layer whose resistivity is higher than a resistivity of the semiconductor substrate, and a separation layer provided between the semiconductor substrate and the semiconductor layer;
- and
- separating the semiconductor layer from the semiconductor substrate at the separation layer by heating the first member by induction heating,
- wherein said step for preparing the first member comprises a step of forming a porous silicon layer, serving as a separation layer, by anodizing a surface of a p+-type nonporous silicon substrate, and a step of forming a p−-type nonporous silicon layer on the porous silicon layer according to epitaxial growth.
A method for manufacturing a semiconductor film comprising the steps of:
- preparing a first member including a semiconductor substrate, a semiconductor layer whose resistivity is higher than a resistivity of the semiconductor substrate, and a separation layer provided between the semiconductor substrate and the semiconductor layer;
- and
- separating the semiconductor layer from the semiconductor substrate at the separation layer by heating the first member by induction heating,
- wherein said step for preparing the first member comprises a step of forming a p−-type silicon layer on a p+-type silicon substrate according to epitaxial growth, and forming an ion-implanted layer, serving as a separation layer, except for a p−-type silicon layer where ions are not implanted on a surface thereof, by implanting at least one type of ions selected from hydrogen, nitrogen and helium to a predetermined depth from a surface of the p−-type silicon layer.
Dependencies are inferred from the claim text.