Method of producing trench insulation in a substrate
OwnerWerner Muthinventor
Life of this patent
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Abstract
In a method of producing a trench insulation in a silicon substrate a first silicon-oxide layer is deposited on a front surface of a sequence of layers including the silicon substrate. Then the first silicon-oxide layer is structured so as to define a mask for a subsequent production of a trench. A trench is etched with a predetermined depth in the silicon substrate making use of the mask and filled with a silicon oxide. Then a first polysilicon layer is conformally deposited on the first silicon-oxide layer and on the oxide-filled trench. The first polysilicon layer is removed in such a way that a polysilicon cover remains on the oxide-filled trench, and the first silicon-oxide layer is removed.
Claims9
A method of producing a trench insulation in a silicon substrate, said silicon substrate having a first main surface and a second main surface, comprising the following steps;
- a) depositing a first silicon-oxide layer, a first silicon nitride layer, and a second silicon-oxide layer in this order on the first main surface of the silicon substrate;
- b) structuring the first silicon-oxide layer, the first silicon nitride layer, and the second silicon-oxide layer so as to define a mask for a subsequent formation of a trench;
- c) etching a trench in the silicon substrate making use of said mask;
- d) filling said trench by a local oxidation of silicon (“LOCOS”) process by subjecting the structure formed by step (a) to (c) to an oxidation in a thermal oxidation process for growing on the trench walls silicon oxide layers until the silicon oxide layers grown on the trench wall contact each other, thereby completely filling the trench with a silicon oxide;
- e) conforming deposition of a first polysilicon layer on the second silicon-oxide layer and on the oxide-filled trench;
- f) removing said first polysilicon layer in such a way that a polysilicon cover remains on said oxide-filled trench;
- and
- g) removing the second silicon-oxide layer.
A method of producing a trench insulation in a SOL, said SOI having a first main surface and a second main surface, comprising the following steps:
- a) depositing a first silicon-oxide layer, a first silicon nitride layer, and a second silicon-oxide layer in this order on the first main surface of the SOL substrate;
- b) structuring the first silicon-oxide layer, the first silicon nitride layer, and the second silicon-oxide layer so as to define a mask for a subsequent formation of a trench;
- c) etching a trench down to an insulating layer of the SOI substrate making use of said mask;
- d) filling said trench by a local oxidation of silicon (“LOCOS”)process by subjecting the structure formed by step (a) to (c) to an oxidation in a thermal oxidation process for growing on the trench walls silicon oxide layers until the silicon oxide layers grown on the trench wall contact each other, thereby completely filling the trench with a silicon oxide;
- e) conforming deposition of a first polysilicon layer on the second silicon-oxide layer and on the oxide-filled trench;
- f) removing said first polysilicon layer in such a way that a polysilicon cover remains on said oxide-filled trench;
- and
- g) removing the second silicon-oxide layer.
A method of producing a trench insulation in a silicon substrate, said silicon substrate having a first main surface and a second main surface, comprising the following steps;
- a) depositing a first silicon-oxide layer, a first silicon nitride layer, and a second silicon-oxide layer in this order on the first main surface of the silicon substrate;
- b) structuring the first silicon-oxide layer, the first silicon nitride layer, and the second silicon-oxide layer so as to define a mask for a subsequent formation of a trench;
- c) etching a trench in the silicon substrate making use of said mask;
- d) filling said trench by a local oxidation of silicon (“LOCOS”) process by subjecting the structure formed by steps (a) to (c) to an process selected from the group consisting of:
- filling said trench by CVD oxide deposition;
- or
- filling said trench partially by thermal oxidation and filling the remainder of said trench by CVD oxide deposition;
- thereby completely filling the trench with a silicon oxide;
- e) conforming deposition of a first polysilicon layer on the second silicon-oxide layer and on the oxide-filled trench;
- f) removing said first polysilicon layer in such a way that a polysilicon cover remains on said oxide-filled trench;
- and
- g) removing the second silicon-oxide layer.
Dependencies are inferred from the claim text.