Back to results
US 6,720,198 B2Granted
Light emitting device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHirokazu Yamagata, Shunpei Yamazaki, Toru Takayama
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a high quality light emitting device is provided, in which light emitting elements having long life are manufactured by using light emitting elements having a structure that deteriorates less easily than conventional structures. After forming a bank, an exposed anode surface is wiped using a PVA (polyvinyl alcohol)-based porous medium, performing leveling and removal of debris. An insulating film is formed covering the bank and the anode, unevenness on the anode surface is covered, and the balance between the amount of holes and electrons injected into an organic compound layer can be regulated.
Claims61
A method of manufacturing a light emitting device, said method comprising the steps of:
- forming at least a thin film transistor on an insulating surface;
- forming interlayer insulating film over the thin film transistor;
- leveling the interlayer insulating film by a chemical mechanical polishing method;
- forming at least a wiring over the interlayer insulating film;
- forming an anode over the leveled interlayer insulating film and electrically connected to the thin film transistor through the wiring;
- forming a resin insulating film covering the anode and the wiring;
- etching the resin insulating film to form at least a bank
- performing a first heat treatment after forming the resin insulating film;
- performing a wiping clean process of the anode;
- forming a first insulating film covering the anode and the bank;
- forming an organic compound layer over the first insulating film;
- and
- forming a cathode over the organic compound layer.
10 more elements
A method of manufacturing a light emitting device, said method comprising the steps of:
- forming at least a thin film transistor on an insulating surface over a substrate;
- forming interlayer insulating film over the thin film transistor;
- leveling the interlayer insulating film by a chemical mechanical polishing method;
- forming at least a wiring over the interlayer insulating film;
- forming an anode over the leveled interlayer insulating film and electrically connected to the thin film transistor through the wiring;
- forming a resin insulating film covering the anode and the wiring;
- moving the substrate from a first chamber to a second chamber
- etching the resin insulating film to form at least a bank;
- performing a first heat treatment after forming the resin insulating film;
- performing a plasma processing of a surface of the bank;
- performing a wiping clean process of the anode;
- forming a first insulating film covering the anode and the bank;
- forming an organic compound layer over the first insulating film and
- forming a cathode over the organic compound layer.
11 more elements
A method of manufacturing a light emitting device, said method comprising the steps of:
- forming at least a thin film transistor on an insulating surface;
- forming interlayer insulating film over the thin film transistor;
- leveling the interlayer insulating film by a chemical mechanical polishing method;
- forming at least a wiring over the interlayer insulating film;
- forming an anode over the leveled interlayer insulating film and electrically connected to the thin film transistor through the wiring;
- forming a first insulating film covering the anode and the wiring;
- etching the first insulating film to form at least a bank;
- performing a first heat treatment after forming the first insulating film;
- performing a wiping clean process of the anode;
- forming an second insulating film covering the anode and the bank;
- forming an organic compound layer over the second insulating film;
- and
- forming a cathode over the organic compound layer.
10 more elements
A method of manufacturing a light emitting device, said method comprising the steps of:
- forming at least a thin film transistor on an insulating surface over a substrate;
- forming interlayer insulating film over the thin film transistor;
- leveling the interlayer insulating film by a chemical mechanical polishing method;
- forming at least a wiring over the interlayer insulating film;
- forming an anode over the leveled interlayer insulating film and electrically connected to the thin film transistor through the wiring;
- forming a first insulating film covering the anode and the wiring;
- moving the substrate from a first chamber to a second chamber
- etching the first insulating film to form at least a bank;
- performing a first heat treatment after forming the first insulating film;
- performing a plasma processing of a surface of the bank
- performing a wiping cleaning process of the anode;
- forming a second insulating film covering the anode and the bank;
- forming an organic compound layer over the second insulating film;
- and
- forming a cathode over the organic compound layer.
12 more elements
A method of manufacturing a light emitting device, said method comprising the steps of:
- forming at least a thin film transistor on an insulating surface;
- forming interlayer insulating film over the thin film transistor;
- leveling the interlayer insulating film by a chemical mechanical polishing method;
- forming at least a wiring over the interlayer insulating film;
- forming an anode over the leveled interlayer insulating film and electrically connected to the thin film transistor through the wiring;
- forming a first insulating film covering the anode and the wiring;
- etching the first insulating film to form at least a bank;
- performing a wiping clean process of the anode;
- forming an second insulating film covering the anode and the bank;
- forming an organic compound layer over the second insulating film;
- and
- forming a cathode over the organic compound layer.
9 more elements
A method of manufacturing a light emitting device, said method comprising the steps of:
- forming at least a thin film transistor on an insulating surface over a substrate;
- forming interlayer insulating film over the thin film transistor;
- leveling the interlayer insulating film by a chemical mechanical polishing method;
- forming at least a wiring over the interlayer insulating film;
- forming an anode over the leveled interlayer insulating film and electrically connected to the thin film transistor through the wiring;
- forming a first insulating film covering the anode and the wiring;
- moving the substrate from a first chamber to a second chamber;
- etching the first insulating film to form at least bank;
- performing a plasma processing of a surface of the bank
- performing a wiping clean process of the anode;
- forming a second insulating film covering the anode and the bank;
- forming an organic compound layer over the second insulating film;
- and
- forming a cathode over the organic compound layer.
11 more elements
A method of manufacturing a light emitting device, said method comprising the steps of:
- forming at least a thin film transistor on an insulating surface;
- forming interlayer insulating film over the thin film transistor;
- leveling the interlayer insulating film by a chemical mechanical polishing method;
- forming at least a wiring over the interlayer insulating film;
- forming an anode over the leveled interlayer insulating film and electrically connected to the thin film transistor through the wiring;
- forming a first insulating film covering the anode and the wiring;
- etching the first insulating film to form at least a bank;
- performing a wiping clean process of the anode by using a porous material;
- forming an second insulating film covering the anode and the bank;
- forming an organic compound layer over the second insulating film;
- and
- forming a cathode over the organic compound layer.
9 more elements
Dependencies are inferred from the claim text.