Nitride-based semiconductor element and method of forming nitride-based semiconductor
AssigneeSanyo Electric Co., Ltd.
InventorsTatsuya Kunisato, Yasuhiko Nomura, Takashi Kano, Hiroki Ohbo, Masayuki Hata
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Abstract
A thin nitride-based semiconductor layer having a low dislocation density is formed by laterally growing a nitride-based semiconductor layer on the upper surface of an underlayer and forming quantum dots on the laterally grown nitride-based semiconductor layer. The number of dislocations is reduced by a single lateral growth and is further reduced due to a dislocation loop effect by the quantum dots, without repeating lateral growth.
Claims26
A method of forming a nitride-based semiconductor comprising steps of:
- laterally growing a nitride-based semiconductor layer on the upper surface of an underlayer;
- and
- forming quantum dots on said laterally grown nitride-based semiconductor layer.
A method of forming a nitride-based semiconductor comprising steps of:
- forming mask layers on the upper surface of an underlayer for partially exposing the upper surface of said underlayer;
- laterally growing a nitride-based semiconductor layer on the upper surface of said underlayer;
- and
- forming quantum dots on said laterally grown nitride-based semiconductor layer. wherein:
- said step of laterally growing said nitride-based semiconductor layer includes a step of epitaxially laterally overgrowing said nitride-based semiconductor layer on the upper surface of said underlayer partially exposed between said mask layers thereby forming facets 20 consisting of said nitride-based semiconductor layer;
- and
- said step of forming said quantum dots includes a step of forming said quantum dots on the surfaces of said facets consisting of said nitride-based semiconductor layer.
A method of forming a nitride-based semiconductor comprising steps of:
- forming mask layers on the upper surface of an underlayer for partially exposing the upper surface of said underlayer
- laterally growing a nitride-based semiconductor layer on the upper surface of said underlayer;
- and
- forming quantum dots on said laterally grown nitride-based semiconductor layer. wherein:
- said step of laterally growing said nitride-based semiconductor layer includes a step of epitaxially laterally overgrowing said nitride-based semiconductor layer on the upper surface of said underlayer partially exposed between said mask layers and on said mask layers thereby forming said nitride-based semiconductor layer having a substantially flat upper surface;
- and
- said step of forming said quantum dots includes a step of forming said quantum dots only above said central portions of said mask layers on said substantially flat upper surface of said nitride-based semiconductor layer and above said central portions between said mask layers.
A method of forming a nitride-based semiconductor comprising steps of:
- forming mask layers on the upper surface of an underlayer for partially exposing the upper surface of said underlayer;
- forming quantum dots on the upper surface of said underlayer partially exposed between said mask layers;
- and laterally growing a nitride-based semiconductor layer on said quantum dots formed on said partially exposed upper surface of said underlayer.
Dependencies are inferred from the claim text.