Porous semiconductor-based optical interferometric sensor
AssigneesThe Regents of the University of California, The Scripps Research Institute
InventorsM. Reza Ghadiri, Michael J. Sailor, Kianoush Motesharei, Shang-Yi Lin, Keiki-Pua S. Dancil
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Abstract
The measurement of the wavelength shifts in the reflectometric interference spectra of a porous semiconductor substrate such as silicon, make possible the highly sensitive detection, identification and quantification of small analyte molecules. The sensor of the subject invention is effective in detecting multiple layers of biomolecular interactions, termed “cascade sensing”, including sensitive detection of small molecule recognition events that take place relatively far from the semiconductor surface.
Claims6
A reflective sensor for an analyte comprising a semiconductor substrate having a porous surface area, said porous surface area having a coating consisting essentially of an organic binder compound thereon, said organic binder compound binding selectively with said analyte and shifting the wavelength of the substrate surface area.
A reflective sensor for an analyte comprising a semiconductor substrate comprising a silicon alloy with up to about 10% by weight of germanium and having a porous surface area, said porous surface area having an organic binder compound thereon, said binder compound binding selectively with said analyte.
Dependencies are inferred from the claim text.