Method of production of spin valve type giant magnetoresistive thin film

A method of production of a bottom type of spin valve type giant magnetoresistive thin film comprised of a buffer layer, an antiferromagnetic layer, a fixed magnetization layer, a nonmagnetic conductive layer, a free magnetization layer, and a protective layer consecutively stacked in that order on a substrate, wherein

• at least one location in the interface between said buffer layer and said antiferromagnetic layer, the interface between said antiferromagnetic layer and said fixed magnetization layer, and the interface between said fixed magnetization layer and said nonmagnetic conductive layer is treated by plasma.

A method of production of a top type of spin valve type giant magnetoresistive thin film comprised of a buffer layer, free magnetization layer, nonmagnetic conductive layer, fixed magnetization layer, antiferromagnetic layer, and protective layer consecutively stacked in that order on a substrate, wherein

• at least one location in the interface between said buffer layer and said free magnetization layer and the interface between said free magnetization layer and said nonmagnetic conductive layer is treated by plasma.

A method of production of a dual type of spin valve type giant magnetoresistive thin film comprised of a buffer layer, a first antiferromagnetic layer, first fixed magnetization layer, first nonmagnetic conductive layer, free magnetization layer, second nonmagnetic conductive layer, second fixed magnetization layer, second antiferromagnetic layer, and protective layer consecutively stacked in that order on a substrate, wherein

• at least one location in the interface between said buffer layer and said first antiferromagnetic layer, the interface between said first antiferromagnetic layer and said first fixed magnetization layer, the interface between said first fixed magnetization layer and said first nonmagnetic conductive layer, and the interface between said free magnetization layer and said second nonmagnetic conductive layer is treated by plasma.

A method of production of a TMR film comprised of a buffer layer deposited on a substrate, a multilayer part including an aluminum oxide layer, a fixed magnetization layer and a free magnetization layer sandwiching said aluminum oxide layer and an antiferromagnetic layer formed adjoining said fixed magnetization layer, and a protective layer deposited at a topmost position, wherein

• at least one location in the plurality of interfaces formed between said aluminum oxide layer and said buffer layer is treated by plasma.