US 6,719,919 B1 · Composition of matter

Abstract

In one aspect, the invention encompasses a semiconductor processing method wherein a conductive copper-containing material is formed over a semiconductive substrate and a second material is formed proximate the conductive material. A barrier layer is formed between the conductive material and the second material. The barrier layer comprises a compound having silicon chemically bonded to both nitrogen and an organic material. In another aspect, the invention encompasses a composition of matter comprising silicon chemically bonded to both nitrogen and an organic material. The nitrogen is not bonded to carbon. In yet another aspect, the invention encompasses a semiconductor processing method. A semiconductive substrate is provided and a layer is formed over the semiconductive substrate. The layer comprises a compound having silicon chemically bonded to both nitrogen and an organic material.

Claims2

Dependent claims

A composition consisting essentially of (CH3)4/3Si3N(8/3) and Si3N4/3;

wherein the (CH3)4/3Si3N(8/3) is present to a concentration of from greater than 0 mole percent to about 50 mole percent;
and wherein the Si3N4/3 is present to a concentration of from about 50 mole percent to less than 100 mole percent.

Dependencies are inferred from the claim text.

Facts

Application

09/641,826Filed 17 Aug 2000 · division

Priority

23 Dec 1998

Granted

13 Apr 2004

Term ends

Not estimatedThe source records don’t support an estimate.

Classification9 codes

H10W 20/077
Of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers: on sidewalls or on…
H10W 20/071
Manufacture or treatment: of dielectric parts thereof
H10W 20/425
Characterised by their conductive parts: barrier, adhesion or liner layers
H10P 14/6336
Using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition: in the presence of a plasma [PECVD]

Composition of matter

Life of this patent

Composition of matter

Life of this patent

Abstract

Claims2