# US 6,719,884 B2 · Method of manufacturing optical devices and related improvements > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 6,719,884 B2 - Document ID: US6719884B2 - Status: Granted - Kind: B2 - Application number: 10/047,308 - Filed: 2002-01-15 - Published: 2003-03-20 - Granted: 2004-04-13 - Earliest claimed: 2001-09-13 - Assignees: Intense Photonics Limited - Inventors: John Haig Marsh; Craig James Hamilton; Olek Peter Kowalski; Stuart Duncan McDougall; Xuefeng Liu; Bo-Cang Qui - Web page: https://patentgrep.com/patent/US6719884B2 ## CPC - H10P 14/3824: {Intermixing, interdiffusion or disordering of III-V heterostructures, e.g. IILD} - B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals - H01S 5/3413: {comprising partially disordered wells or barriers} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES - H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL ## Abstract A method of manufacturing an optical device, wherein the device body portion from which the device is to be made includes at least one Quantum Well, the method including the step of causing an impurity material including copper to intermix with the Quantum Well. ## Claims ### Claim 1 A method of manufacturing an optical device, a device body portion from which the device is to be made including at least one Quantum Well (QW), the method including the steps of: causing an impurity material to intermix with the at least one Quantum Well, wherein the impurity material at least includes Copper (Cu). ### Claim 2 (depends on 1) A method of manufacturing an optical device as claimed in claim 1, wherein the impurity material substantially comprises Copper or an alloy thereof. ### Claim 3 (depends on 1) A method of manufacturing an optical device as claimed in claim 1, wherein the method includes a preceding step of depositing on or adjacent the device body portion a layer including the impurity material. ### Claim 4 (depends on 3) A method, of manufacturing an optical device as claimed in claim 3, wherein the impurity material is incorporated with a carrier material. ### Claim 5 (depends on 4) A method of manufacturing an optical device as claimed in claim 4, wherein the carrier material is a dielectric material. ### Claim 6 (depends on 4) A method of manufacturing an optical device as claimed in claim 4, wherein the layer including the impurity material is deposited directly upon a surface of the device body portion. ### Claim 7 (depends on 6) A method of manufacturing an optical device as claimed in claim 6, wherein the layer is deposited by use of a sputtering apparatus. ### Claim 8 (depends on 4) A method of manufacturing an optical device as claimed in claim 4, wherein the layer is removed from the device body portion prior to intermixing. ### Claim 9 (depends on 3) A method of manufacturing an optical device as claimed in claim 3, wherein the layer comprises a layer of the impurity material which is deposited adjacent a surface of the device body portion upon a spacer layer. ### Claim 10 (depends on 9) A method of manufacturing an optical device as claimed in claim 9, wherein the spacer layer comprises a dielectric material. ### Claim 11 (depends on 9) A method of manufacturing an optical device as claimed in claim 9, wherein a further layer is deposited on the layer. ### Claim 12 (depends on 11) A method of manufacturing an optical device as claimed in claim 11, wherein the further layer comprises a further dielectric layer deposited by use of a sputtering apparatus. ### Claim 13 (depends on 9) A method of manufacturing an optical device as claimed in claim 9, wherein the layer is deposited by use of sputtering and the spacer layer is deposited by use of a sputtering apparatus. ### Claim 14 (depends on 3) A method of manufacturing an optical device as claimed in claim 3, wherein the method also includes the yet further preceding steps of: providing a substrate; growing on the substrate: a first optical cladding layer; a core guiding layer including the at least one Quantum Well (QW); a second optical cladding layer; and optionally a contact layer. ### Claim 15 (depends on 14) A method of manufacturing an optical device as claimed in claim 14, wherein the first optical cladding layer, core guiding layer, second optical cladding layer and contact layer are grown by Molecular Beam Epitaxy (MBE) or Metal Organic Chemical Vapour Deposition (MOCVD). ### Claim 16 (depends on 1) A method of manufacturing an optical device as claimed in claim 1, wherein the impurity material is caused to intermix with the at least one Quantum well (QW) by raising the device body portion to an elevated temperature for a predetermined time. ### Claim 17 (depends on 16) A method of manufacturing an optical device as claimed in claim 16, wherein the elevated temperature is in the region 700° C. to 950° C., and the predetermined time is in the region of 30 seconds to 300 seconds. ### Claim 18 (depends on 16) A method of manufacturing an optical device as claimed in claim 16, wherein the step of raising the device body portion to an elevated temperature comprises annealing of the device body portion, which causes diffusion into the at least one Quantum Well of impurity material and out diffusion of ions or atoms from the Quantum Wells. ### Claim 19 (depends on 1) A method of manufacturing an optical device as claimed in claim 1, wherein the method includes the step of: causing the impurity material to diffuse into the device body portion and also material of the device body portion to diffuse out and into a further material. ### Claim 20 (depends on 19) A method of manufacturing an optical device as claimed in claim 19, wherein further material is a dielectric material. ### Claim 21 (depends on 1) A method of manufacturing an optical device as claimed in claim 1, wherein the method includes the steps of: patterning a surface of the device body portion with a plurality of areas of the impurity material, at least two of the areas of impurity material being spaced from the surface by different amounts; causing the impurity material of the plurality of areas to intermix with the at least one Quantum Well so as to tune a band-gap of the intermixed at least one Quantum Well in the at least two areas to different values.