Plasma process apparatus

A three-electrode plasma process apparatus, comprising:

• two parallel plate electrodes I and II, one of said electrode I and said electrode II being configured for carrying a substrate to be plasma processed;
• a magnetic field applying means for applying a magnetic field horizontal and one-directional to a surface of the substrate to be processed, said magnetic field applying means being a single magnetic source;
• a single auxiliary electrode, said auxiliary electrode being positioned around the periphery of said electrode I;
• a space where a plasma can be excited, said space being provided on the side of said auxiliary electrode opposite said electrode II;
• and
• a means for applying a high-frequency power to said auxiliary electrode.

A plasma process apparatus, wherein:

• two parallel plate electrodes I and II are provided, one of said electrode I and said electrode II being configured for carrying a substrate to be plasma processed,
• said electrode I is a substrate support electrode, said electrode I being configured for carrying a substrate to be plasma processed,
• said electrode II is in a form of a showerhead electrode,
• a single auxiliary electrode is provided, said auxiliary electrode being positioned a round the periphery of said electrode I,
• a magnetic field applying means for applying a magnetic field is provided, said magnetic field being horizontal and one-directional to a surface of the substrate to be processed, said magnetic field applying means being a single magnetic source,
• a space where a plasma can be excited is provided on the side of said auxiliary electrode opposite said electrode II, and
• a means for applying a high-frequency power to said auxiliary electrode is provided.