# US 6,719,849 B2 · Single-substrate-processing apparatus for semiconductor process > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 6,719,849 B2 - Document ID: US6719849B2 - Status: Granted - Kind: B2 - Application number: 09/855,493 - Filed: 2001-05-16 - Published: 2001-12-20 - Granted: 2004-04-13 - Earliest claimed: 2000-05-22 - Assignees: Tokyo Electron Limited - Inventors: Takahiro Horiguchi; Naofumi Oda - Web page: https://patentgrep.com/patent/US6719849B2 ## CPC - H10P 72/04: {Apparatus for manufacture or treatment} - C23C 16/4581: {characterised by material of construction or surface finish of the means for supporting the substrate} - H01J 37/32431: {Constructional details of the reactor} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract A single-substrate-processing apparatus includes an airtight process chamber, in which a worktable is supported by a pedestal. A conduction structure is arranged to conduct static electricity generated on the worktable and a wafer thereon to a grounded portion outside the process chamber. The conduction structure has a conductive film formed on insulating surfaces of the worktable and the pedestal. ## Claims ### Claim 1 A single-substrate-processing apparatus for performing a semiconductor process, comprising: an airtight process chamber configured to process a target substrate; a ceramic heater disposed within the process chamber, and having a worktable configured to support and heat the target substrate, and an insulating pedestal connected to the worktable to support the worktable; and a conductive film formed on surfaces and connecting of the ceramic heater and the insulating pedestal, and electrically connected at a lower end of the pedestal to a grounded portion, which is disposed as a part of the process chamber or disposed outside the process chamber. ### Claim 2 (depends on 1) The apparatus according to claim 1, wherein the conductive film comprises at least one of silicon carbide and titanium oxide. ### Claim 3 (depends on 1) The apparatus according to claim 1, wherein the conductive film is a film formed by means of chemical vapor deposition. ### Claim 4 (depends on 1) The apparatus according to claim 1, wherein the conductive film is a film formed by means of thermal spraying. ### Claim 5 (depends on 1) The apparatus according to claim 1, wherein the conductive film has a thickness ranging from 20 to 100 μm. ### Claim 6 (depends on 1) The apparatus according to claim 1, wherein, the worktable and the pedestal comprise insulating surfaces on which the conductive film is formed. ### Claim 7 (depends on 6) The apparatus according to claim 6, wherein portions of the worktable and the pedestal facing an atmosphere in the process chamber are covered with the conductive film. ### Claim 8 (depends on 1) The apparatus according to claim 1, wherein the conductive film is electrically connected to a conductive portion of a casing of the process chamber, which is grounded. ### Claim 9 (depends on 1) The apparatus according to claim 1, wherein the pedestal is attached to the process chamber by a fixing member which penetrates a casing of the process chamber, and a conductive portion of the fixing member is electrically connected to the conductive film. ### Claim 10 (depends on 9) The apparatus according to claim 9, further comprising: a bias section configured to selectively apply a positive electrical potential to the conductive portion of the fixing member. ### Claim 11 (depends on 10) The apparatus according to claim 10, wherein the bias section comprises: a switch configured to switch between a state where the conductive portion of the fixing member is grounded and a state where the conductive portion of the fixing member is connected to the bias section. ### Claim 12 (depends on 1) The apparatus according to claim 1, further comprising: a supply section configured to supply a process gas into the process chamber; an exhaust section configured to vacuum-exhaust the process chamber, a window formed in a casing of the process chamber and facing the worktable; and a UV lamp disposed outside the process chamber and facing the window, the UV lamp being configured to radiate UV rays onto the process gas above the worktable to activate the process gas. ### Claim 13 (depends on 12) The apparatus according to claim 12, wherein the process gas contains an oxidizing gas for subjecting the target substrate to oxidation. ### Claim 14 (depends on 13) The apparatus according to claim 13, wherein the oxidizing gas comprises ozone gas. ### Claim 15 (depends on 1) The apparatus according to claim 1, wherein the pedestal is attached to a casing of the process chamber by a flange and a fixing member, and stands within the process chamber. ### Claim 16 (depends on 15) The apparatus according to claim 15, wherein the conductive film is electrically connected to a conductive portion of the flange and a conductive portion of the fixing member, and is electrically connected to the grounded portion disposed outside the process chamber through the conductive portion of the fixing member. ### Claim 17 (depends on 16) The apparatus according to claim 16, wherein the conductive portions of the flange and the fixing member are electrically isolated from the casing. ### Claim 18 (depends on 17) The apparatus according to claim 17, further comprising a bias section configured to selectively apply a positive electrical potential to the conductive portion of the fixing member. ### Claim 19 (depends on 18) The apparatus according to claim 18, wherein the bias section comprises a switch configured to switch between a state where the conductive portion of the fixing member is grounded and a state where the conductive portion of the fixing member is connected to the bias section.