Ammonia for use in manufacture of GaN-type compound semiconductor and method for manufacturing GaN-type compound semiconductor
AssigneeShowa Denko K.K.
InventorsHideki Hayashida, Taizo Ito, Yasuyuki Sakaguchi
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Abstract
Ammonia for use in the manufacture of a GaN-type compound semiconductor, filled in a charging container 18 such that at least a part of the ammonia is liquid and the liquid phase ammonia has a water concentration determined by a Fourier-transform infrared spectroscopy (FT-IR) of 0.5 vol ppm or less, is introduced in the gaseous state into a reaction chamber 11 housing therein a substrate 1, and a layer comprising a GaN-type compound started from this ammonia is formed on the substrate 1.
Claims3
A method for manufacturing a GaN-type compound semiconductor light emitting device, comprising introducing ammonia in the gaseous state into a reaction chamber housing therein a substrate, and forming a layer comprising a GaN-type compound started from the ammonia on the substrate, wherein said ammonia is taken out in the gaseous state from a charging container, in a room temperature condition, a portion of ammonia in the charging container being in a liquid phase and another portion of ammonia in the charging container being in the gas phase, and a water concentration of said liquid phase ammonia in the charging container being controlled in the range between 0.01 and 0.5 vol ppm as determined by Fourier-transform infrared spectroscopy (FT-IF).
Dependencies are inferred from the claim text.