Three-dimensional memory
OwnerGuobiao Zhanginventor
Life of this patent
Estimating the term…
Abstract
One greatest advantage of the three-dimensional memory (3D-M) is its integratibility. In a three-dimensional integrated memory (3DiM), the 3D-M is integrated with an embedded RWM and/or an embedded processor. Collectively, the 3DiM excels in speed, density/cost, programmability and data security. The present invention makes further improvements to three-dimensional mask-programmable read-only memory. Another 3D-M application of great importance is in the area of IC-testing. The 3D-M carrying test vectors can be integrated with the circuit-under-test, thus supporting field self-test and at-speed test.
Claims12
A non-electrically programmable three-dimensional integrated memory (NEP-3DiM), comprising:
- a substrate circuit, said substrate circuit further comprising a substrate integrated circuit and an address-decoder, said substrate integrated circuit comprising an embedded RWM and/or an embedded processor;
- at least a non-electrically programmable three-dimensional memory (NEP-3DM) level, said NEP-3DM level being stacked on top of said substrate circuit and connected with said substrate circuit through a plurality of inter-level connecting vias, said address-decoder decoding address for at least a portion of said NEP-3DM level.
A non-electrically programmable three-dimensional memory (NEP-3DM), comprising:
- a substrate circuit, said substrate circuit comprising a plurality of active devices and an interconnect system connecting said active devices, said substrate circuit further comprising an address-decoder;
- at least an NEP-3DM level stacked on top of said substrate circuit and connected with said substrate circuit through a plurality of inter-level connecting vias, said NEP-3DM level comprising a plurality of address-selection lines and NEP-3DM cells, said address-decoder decoding address for at least a portion of said NEP-3DM level.
Dependencies are inferred from the claim text.