SOI-LDMOS device with integral voltage sense electrodes
AssigneeKoninklijke Philips Electronics N.V.
InventorsJohn Pettruzello, Benoit Dufort, Theodore Letavic
Life of this patent
Estimating the term…
Abstract
The present invention provides a semiconductor device of the SOI-LDMOS type in which the field plate is divided into a plurality of electrically isolated sub-field plates. At least two of the divided sub-field plates are connected to external circuits for reading their respective output voltages. By connecting a first external circuit and a second external circuit having specific components, one is configured for determining an instantaneous output voltage and the other is configured for determining a change in output voltage as a function of time. Power is disconnected from the semiconductor device if either the instantaneous voltage or the derivative of voltage over time exceeds an established value.
Claims7
A semiconductor device of the type having a source region of a first conductivity type, a drain region, a substrate of a second conductivity type and a gate, the semiconductor device comprising a plurality of sub-field plates isolated from other terminals thereof, each sub-field plate having an electrode for sensing and analysis of voltage values therefrom.
Dependencies are inferred from the claim text.