US 6,717,181 B2 · Luminescent device having thin film transistor

Abstract

In the case where a material containing an alkaline metal or an alkaline-earth metal in a cathode, an anode, a buffer layer, or an organic compound layer is used, there is a fear of the diffusion of an impurity ion (representatively, alkaline metal ion or alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. As the insulating films 117, 317 and 417 provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion but also aggressively absorbing an impurity ion, for example, a silicon nitride film containing a large amount of fluorine, a silicon oxynitride film containing a large amount of fluorine or an organic resin film containing a particle having an antimony (Sb) compound, a tin (Sn) compound, or an indium (In) compound is used.

Claims18

Dependent claims

A luminescent device comprising:

a thin film transistor provided over an insulating surface of a substrate;
a luminescent element electrically connected with said thin film transistor, said luminescent element comprising an organic compound layer, an anode and a cathode, said cathode containing an alkaline metal;
at least one insulating layer provided between said thin film transistor and said luminescent element, said insulating layer capable of adsorbing said alkaline metal.

Dependencies are inferred from the claim text.

Facts

Application

10/147,924Filed 20 May 2002

Priority

JP 2001-15289322 Feb 2001

Published

US 2002/0190256 A119 Dec 2002

Granted

6 Apr 2004

Term ends

Not estimatedThe source records don’t support an estimate.

Classification18 codes

H10D 86/00
Integrated devices formed in or on insulating or conducting substrates
H10D 86/40
Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless…
H10D 86/451
Characterised by multiple TFTs: characterised by the compositions or shapes of the interlayer dielectrics
H10D 86/471
Characterised by multiple TFTs: having different architectures, e.g. having both top-gate and bottom-gate TFTs

Luminescent device having thin film transistor

Life of this patent

Luminescent device having thin film transistor

Life of this patent

Abstract

Claims18