Low dielectric constant material and method of processing by CVD

A method for forming an organofluorosilicate glass film substantially free of C—F bonds, the method comprising:

• introducing gaseous reagents comprising a fluorine providing gas, an oxygen providing gas, and at least one silicon containing precursor gas selected from an organosilane, an organosiloxane and mixtures thereof wherein each of the gaseous reagents are free of C—F bonds into a reaction chamber comprising a substrate;
• and
• applying energy to the gaseous reagents to deposit the organofluorosilicate glass film onto at least a portion of the substrate wherein there is substantially no signal at about +90 ppm for —CH2F and about +150 ppm for —CF3 as determined by carbon-13 NMR.

A method for forming an organofluorosilicate glass film substantially free of C—F bonds, the method comprising:

• introducing gaseous reagents comprising a fluorine providing gas, an oxygen providing gas, and at least one silicon containing precursor gas selected from an organosilane, an organosiloxane, and mixtures thereof wherein each of the gaseous reagents are free of C—F bonds into a reaction chamber comprising a substrate;
• and
• applying energy to the gaseous reagents to deposit the organofluorosilicate glass film onto at least a portion of the substrate wherein the organofluorosilicate glass film has a nano-indentation hardness of about 1.6 GPa or greater, a Young's Modulus of about 10 GPa or greater, and a dielectric constant of about 3.0 or below.

A method for forming an organofluorosilicate glass film having the formula formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, y is from 10 to 50 atomic %, x is from 1 to 30 atomic %, and z is from 0.1 to 15 atomic %, the method comprising:

• introducing gaseous reagents comprising a fluorine providing gas, an oxygen providing gas, and at least one silicon containing precursor gas selected from an organosilane, an organosiloxane and mixtures thereof wherein each of the gaseous reagents are free of C—F bonds into a reaction chamber comprising a substrate, and
• applying energy to the gaseous reagents to deposit the organofluorosilicate glass film onto at least a portion of the substrate wherein the ratio of atomic percent of carbon to silicon in the film is below 0.60 and wherein the ratio of atomic percent of fluorine to silicon in the film ranges from about 0.06 to about 0.22 and wherein the film is substantially free of C—F bonds.