Multi-bank memory device having a 1:1 state machine-to-memory bank ratio
AssigneeLSI Logic Corporation
InventorShuaibin Lin
Life of this patent
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AssigneeLSI Logic Corporation
InventorShuaibin Lin
Estimating the term…
A memory controller includes an input command decoder circuit for generating an input command, a state machine controller coupled to receive the input command from the input command decoder circuit and generate a state machine input instruction therefrom, a state machine array comprised of a plurality of state machines coupled to receive the input command and state machine input instructions from the state machine controller and to generate state machine output instructions therefrom, and an output command decoder circuit for receiving a state machine output command and generating an output command therefrom for transmission to a memory, associated with the memory controller, comprised of a plurality of memory banks. A first state machine execute a state machine input instruction transmitted, with the input conunand, to all state machines if a memory address contained within the input command corresponds to an address for a corresponding memory bank.
A computer system, comprising:
A computer system, comprising:
A computer system, comprising:
A computer system, comprising:
A computer system, comprising:
A computer system, comprising:
A computer system, comprising:
A multi-bank memory device, comprising:
A multi-bank memory device, comprising:
A multi-bank memory device, comprising:
A method for constructing a memory device, comprising:
Dependencies are inferred from the claim text.