Non-volatile semiconductor memory device and semiconductor disk device
AssigneesRenesas Technology Corp., Hitachi Device Engineering Co., Ltd.
InventorsNaoki Kobayashi, Shunichi Saeki, Hideaki Kurata
Life of this patent
Estimating the term…
Abstract
A non-volatile semiconductor memory device is capable of having its individual banks controlled separately from the outside, and a semiconductor disk device is capable of proceeding immediately to the next writing to a bank of non-volatile semiconductor memory device which has become ready. Each bank has the independent write operation of data from its data register to memory cells, enabling the transfer of data from the outside to the data register of the bank even during the write operation of other bank from the data register to memory cells thereof.
Claims9
A semiconductor disk device which incorporates one or more non-volatile semiconductor memory devices and makes access to said non-volatile semiconductor memory devices in response to disk access requests from a host, wherein said non-volatile semiconductor memory devices have a total number (Nb) of banks of two or more, and a controller device which is connected to said non-volatile semiconductor memory devices and adapted to control said non-volatile semiconductor memory devices has a data buffer with a storage capacity which is greater than the total storage capacity (A) of data registers included in said non-volatile semiconductor memory devices and a buffer control table which temporarily stores the correspondence between the data held by said data buffer and the non-volatile semiconductor memory devices to which the data is to be written.
Dependencies are inferred from the claim text.